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UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR


DESCRIPTION
  The UTC MJE2955T is designed for general purpose
of amplifier and switching applications.



                                                                             1




                                                                                                   TO-220


                                                                         1:BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
               PARAMETER                           SYMBOL                  RATING                  UNIT
Collector-base voltage                                 VCBO                    70                    V
Collector-emitter voltage                              VCEO                    60                    V
Emitter-base voltage                                   VEBO                    5                     V
Total Power Dissipation(Ta=25

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