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UTC MMBTA13                              NPN EPITAXIAL SILICON TRANSISTOR

DARLINGTON TRANSISTOR

DESCRIPTION
The UTC MMBTA13 is a darlington transistor.



FEATURES                                                             1
*Collector-Emitter Voltage: Vces = 30V
*Collector Dissipation : Pc ( mas ) = 625 mW




                                                                                     SOT-23




                                                               1:EMITTER 2:BASE 3:COLLECTOR


ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
            PARAMETER                          SYMBOL             VALUE                UNIT
Collector-Base Voltage                           VCBO                30                  V
Collector-Emitter Voltage                        VCEO                30                  V
Emitter-Base Voltage                             VEBO                10                  V
Collector Dissipation(Tc=25

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