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UTC MMBTA42                     NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR

DESCRIPTION
  The UTC MMBTA42 are high voltage transistors,
designed for telephone switch and high voltage
switch.


FEATURES                                                                  1
*Collector-Emitter voltage:
       VCEO=300V(UTC MMBTA42)
*High current gain
*Collector Dissipation:
       Pc(max)=625mW



                                                                                           SOT-23




                                                                1:EMITTER       2:BASE   3:COLLECTOR


ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
           PARAMETER                          SYMBOL                    VALUE                  UNIT
Collector-Base Voltage                                                                          V
                     UTC MMBTA42               VCBO                      300
Collector-Emitter Voltage                                                                       V
                     UTC MMBTA42               VCEO                   300
Emitter-Base Voltage                           VEBO                     6                       V
Collector Dissipation                           Pc                    625                      mW
Collector Current                               Ic                    500                      mA
Junction Temperature                            Tj                    150                      

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