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UTC 2N5401                              PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING
TRANSISTOR

FEATURES
*Collector-Emitter Voltage:
 VCEO=-150V
*Collector Dissipation:
 Pc(max)=625mW
                                                                              1
*High current gain


APPLICATIONS
*Telephone Switching Circuit
*Amplifier                                                                                      TO-92




                                                                      1:EMITTER     2:BASE   3:COLLECTOR


ABSOLUTE MAXIMUM RATINGS ( Ta=25

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