Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors UTC 2sa1012
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>> Download 2sa1012 documenatation <<Text preview - extract from the documentUTC A1012 SILICON PNP EPITAXIAL TRANSISTOR
SILICON PNPEPITAXIAL
TRANSISTOR
DESCRIPTION
The A1012 is designed for silicon current switching
application.
1
FEATURES
*Low collector saturation voltage
Vce(sat)=-0.4V(MAX.) at Ic=-3A
*High speed switching time
Tstg=1.0us(Typ.)
*Complementary to 2SC2562
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Total Power Dissipation(Ta=25
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