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UTC 2SB834                      PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR


DESCRIPTION
 Low frequency power amplifier applications.




                                                                            1




                                                                                                   TO-220


                                                                      1:BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
            PARAMETER                            SYMBOL                 RATING                    UNIT
Collector-base voltage                             VCBO                     60                      V
Collector-emitter voltage                          VCEO                     60                      V
Emitter-base voltage                               VEBO                     7                       V
Total Power Dissipation(Ta=25

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