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SUM110N03-03P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFET
V(BR)DSS (V) rDS(on) (W) ID (A)a D 175_C Junction Temperature
D Optimized for Low-Side Synchronous Rectifier
0.0026 @ VGS = 10 V 110a
30 D 100% Rg Tested
0.004 @ VGS = 4.5 V 110a
APPLICATIONS
D Desktop or Server CPU Core
D
TO-263
DRAIN connected to TAB
G
G D S
Top View
Ordering Information: SUM110N03-03P
SUM110N03-03P-E3 (Lead Free) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS "20 V
TC = 25_C 110a
Continuous Drain Current (TJ = 175_C) ID
TC = 100_C 110a
A
Pulsed Drain Current IDM 400
Avalanche Current IAR 65
Repetitive Avalanche Energyb L = 0.1 mH EAR 211 mJ
TC = 25_C (TO-220AB and TO-263) 375c
Maximum Power Dissipationb PD W
TA = 25_C (TO-263)d 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient
J ti t A bi t RthJA
Free Air (TO-220AB) 62.5 C/W
_C/W
Junction-to-Case RthJC 0.4
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 71964 www.vishay.com
S-32523--Rev. B, 08-Dec-03 1
SUM110N03-03P
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 30
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 2 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 1
g
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C 50 mA
m
VDS = 30 V, VGS = 0 V, TJ = 175_C 250
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.002 0.0026
VGS = 10 V, ID = 30 A, TJ = 125_C 0.004
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = 10 V, ID = 30 A, TJ = 175_C 0.005
VGS = 4.5 V, ID = 20 A 0.0031 0.004
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 S
Dynamicb
Input Capacitance Ciss 12100
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1910 pF
Reverse Transfer Capacitance Crss 1250
Total Gate Chargeb Qg 172 250
Gate-Source Chargeb Qgs VDS = 15 V, VGS = 10 V, ID = 110 A
, , 40 nC
Gate-Drain Chargeb Qgd 22
Gate Resistance Rg 0.3 1.3 1.9 W
Turn-On Delay Timeb td(on) 20 35
Rise Timeb tr 20 35
VDD = 15 V, RL = 0.18 W
ns
Turn-Off Delay Timeb td(off) ID ^ 110 A, VGEN = 10 V, Rg = 2.5 W 90 140
Fall Timeb tf 25 40
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current IS 85
A
Pulsed Current ISM 440
Forward Voltagea VSD IF = 110 A, VGS = 0 V 1.1 1.5 V
Reverse Recovery Time trr 60 120 ns
Peak Reverse Recovery Current IRM IF = 85 A, di/dt = 100 A/ms
m 3.5 5 A
Reverse Recovery Charge Qrr 0.1 0.3 mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71964
2 S-32523--Rev. B, 08-Dec-03
SUM110N03-03P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250
200
VGS = 10 thru 5 V
200
160
I D - Drain Current (A)
I D - Drain Current (A)
150 4V 120
100
80
TC = 125_C
50
40
3V 25_C -55_C
0
0
0 2 4 6 8 10
0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
250 0.0060
200
r DS(on) - On-Resistance ( W )
0.0045
g fs - Transconductance (S)
25_C
TC = -55_C
150 VGS = 4.5 V
0.0030
125_C
100 VGS = 10 V
0.0015
50
0 0.0000
0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
15000 10
Ciss
VDS = 15 V
V GS - Gate-to-Source Voltage (V)
12000 8 ID = 85 A
C - Capacitance (pF)
9000 6
6000 4
Coss
3000 2
Crss
0 0
0 6 12 18 24 30 0 30 60 90 120 150 180
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71964 www.vishay.com
S-32523--Rev. B, 08-Dec-03 3
SUM110N03-03P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 10 V
ID = 30 A
1.6
r DS(on) - On-Resistance (W)
I S - Source Current (A)
(Normalized)
1.2 TJ = 150_C
10
TJ = 25_C
0.8
0.4
0.0 1
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
40
38 ID = 10 mA
(BR)DSS (V)
36
V
34
32
30
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
www.vishay.com Document Number: 71964
4 S-32523--Rev. B, 08-Dec-03
SUM110N03-03P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
120 1000
10 ms
Limited 100 ms
100
by rDS(on)
100
I D - Drain Current (A)
I D - Drain Current (A)
80 1 ms
10 ms
60 10
100 ms
dc
40
1 TC = 25_C
20 Single Pulse
0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
0.2
Thermal Impedance
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71964 www.vishay.com
S-32523--Rev. B, 08-Dec-03 5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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