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SUM110N03-04P
New Product Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
PRODUCT SUMMARY D Optimized for Low-Side Synchronous Rectifier Operation
V(BR)DSS (V) rDS(on) (W) ID (A) D New Package with Low Thermal Resistance
D 100% Rg Tested
0.0042 @ VGS = 10 V 110
30
0.0065 @ VGS = 4.5 V 77 APPLICATIONS
D DC/DC Converters
D Synchronous Rectifier
D
TO-263
G
G D S
Top View
S
Ordering Information: SUM110N03-04P
SUM110N03-04P-E3 (Lead Free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS "20 V
TC = 25_C 110
Continuous Drain Current (TJ = 175_C) ID
TC = 100_C 88
A
Pulsed Drain Current IDM 300
Avalanche Current IAR 55
Repetitive Avalanche Energya L = 0.1 mH EAR 151 mJ
TC = 25_C 120b
Maximum Power Dissipationa PD W
TA = 25_Cc 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mountc RthJA 40
_C/W
Junction-to-Case RthJC 1.25
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 72366 www.vishay.com
S-32523--Rev. B, 08-Dec-03 1
SUM110N03-04P
Vishay Siliconix New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 30
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 1
g
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C 50 mA
m
VDS = 30 V, VGS = 0 V, TJ = 175_C 250
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 20 A 0.0033 0.0042
VGS = 10 V, ID = 20 A, TJ = 125_C 0.0063
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = 10 V, ID = 20 A, TJ = 175_C 0.0076
VGS = 4.5 V, ID = 20 A 0.0052 0.0065
Forward Transconductancea gfs VDS = 15 V, ID = 20 A 20 S
Dynamicb
Input Capacitance Ciss 5100
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 860 pF
Reverse Transfer Capacitance Crss 430
Gate-Resistance Rg 0.5 1.0 1.7 W
Total Gate Chargeb Qg 40 60
Gate-Source Chargeb Qgs VDS = 15 V, VGS = 4.5 V, ID = 50 A
, , 18 nC
Gate-Drain Chargeb Qgd 16
Turn-On Delay Timeb td(on) 12 20
Rise Timeb tr 12 20
VDD = 15 V, RL = 0.3 W
ns
Turn-Off Delay Timeb td(off) ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W 40 60
Fall Timeb tf 10 15
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current IS 100
A
Pulsed Current ISM 300
Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.2 1.5 V
Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/ms 40 80 ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 72366
2 S-32523--Rev. B, 08-Dec-03
SUM110N03-04P
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 120
VGS = 10 thru 5 V
100
200
80
I D - Drain Current (A)
I D - Drain Current (A)
150
4V
60
100
40
TC = 125_C
50
20
3V 25_C
2V -55_C
0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
180 0.010
TC = -55_C
150
0.008
r DS(on) - On-Resistance ( W )
25_C
g fs - Transconductance (S)
120
125_C 0.006 VGS = 4.5 V
90
0.004 VGS = 10 V
60
0.002
30
0 0.000
0 20 40 60 80 100 0 20 40 60 80 100
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
8000 10
7000
VDS = 15 V
V GS - Gate-to-Source Voltage (V)
8 ID = 50 A
6000 Ciss
C - Capacitance (pF)
5000
6
4000
4
3000
2000
Coss 2
1000
Crss
0 0
0 6 12 18 24 30 0 20 40 60 80 100
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 72366 www.vishay.com
S-32523--Rev. B, 08-Dec-03 3
SUM110N03-04P
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
1.8 100
VGS = 10 V
ID = 30 A
1.6
r DS(on) - On-Resistance (W)
I S - Source Current (A)
1.4 TJ = 150_C
(Normalized)
TJ = 25_C
1.2 10
1.0
0.8
0.6 1
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)
Drain-Source Voltage Breakdown
vs. Junction Temperature
40
ID = 1.0 mA
38
36
V (BR)DSS (V)
34
32
30
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
www.vishay.com Document Number: 72366
4 S-32523--Rev. B, 08-Dec-03
SUM110N03-04P
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area, Junction-to-Case
120 1000
Limited by rDS(on)
10 ms
100
100 100 ms
I D - Drain Current (A)
I D - Drain Current (A)
80
1 ms
60 10
10 ms
dc, 100 ms
40
1
TC = 25_C
20 Single Pulse
0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 72366 www.vishay.com
S-32523--Rev. B, 08-Dec-03 5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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