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SUM27N20-78
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES
D TrenchFETr Power MOSFET
PRODUCT SUMMARY D 175_C Junction Temperature
D New Low Thermal Resistance Package
V(BR)DSS (V) rDS(on) (W) ID (A) D PWM Optimized for Fast Switching
200
0.078 @ VGS = 10 V 27
APPLICATIONS
0.083 @ VGS = 6 V 26
D Isolated DC/DC Converters
- Primary-Side Switch
D
TO-263
G
G D S
Top View
SUM27N20-78 S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200
Gate-Source Voltage VGS "20 V
TC = 25_C 27
Continuous Drain Current (TJ = 175_C) ID
TC = 125_C 15.5
A
Pulsed Drain Current IDM 60
Avalanche Current IAR 18
Repetitive Avalanche Energya L = 0.1 mH EAR 16.2 mJ
TC = 25_C 150b
Maximum Power Dissipationa PD W
TA = 25_Cc 3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mount (TO-263)c RthJA 40
_C/W
Junction-to-Case (Drain) RthJC 1.0
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 72108 www.vishay.com
S-31511--Rev. B, 14-Jul-03 1
SUM27N20-78
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 200
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 4
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 160 V, VGS = 0 V 1
Zero Gate Voltage Drain Current
g IDSS VDS = 160 V, VGS = 0 V, TJ = 125_C 50 m
mA
VDS = 160 V, VGS = 0 V, TJ = 175_C 250
On-State Drain Currenta ID(on) VDS w 15 V, VGS = 10 V 60 A
VGS = 10 V, ID = 20 A 0.064 0.078
Drain-Source On-State Resistancea VGS = 10 V, ID = 20 A, TJ = 125_C 0.160 W
rDS( )
DS(on)
VGS = 10 V, ID = 20 A, TJ = 175_C 0.205
Drain-Source on State Resistance VGS = 6 V, ID = 15 A 0.068 0.083 W
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 15 S
Dynamicb
Input Capacitance Ciss 2150
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 215 pF
Reverse Transfer Capacitance Crss 90
Total Gate Chargec Qg 40 60
Gate-Source Chargec Qgs VDS = 100 V, VGS = 10 V, ID = 20 A
, , 11 nC
Gate-Drain Chargec Qgd 14
Gate Resistance RG 2 W
Turn-On Delay Timec td(on) 15 25
Rise Timec tr 35 55
VDD = 100 V, RL = 5 W
ns
Turn-Off Delay Timec td(off) ID ^ 20 A, VGEN = 10 V, RG = 2.5 W 40 60
Fall Timec tf 30 45
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current IS 27
A
Pulsed Current ISM 60
Forward Voltagea VSD IF = 20 A, VGS = 0 V 1.0 1.5 V
Reverse Recovery Time trr 115 170 ns
Peak Reverse Recovery Current IRM(REC) , m
IF = 50 A, di/dt = 100 A/ms 7.5 12 A
Reverse Recovery Charge Qrr 0.43 1.02 mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com Document Number: 72108
2 S-31511--Rev. B, 14-Jul-03
SUM27N20-78
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
60 60
VGS = 10 thru 7 V 6V
50 50
I D - Drain Current (A)
I D - Drain Current (A)
40 40
30 30
20 5V 20
TC = 125_C
10 10 25_C
3 V, 4 V - 55_C
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
80 0.16
TC = - 55_C
r DS(on) - On-Resistance ( W )
60 25_C 0.12
g fs - Transconductance (S)
125_C
40 0.08 VGS = 6 V
VGS = 10 V
20 0.04
0 0.00
0 10 20 30 40 50 60 0 10 20 30 40 50 60
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
3000 20
2500 VDS = 100 V
V GS - Gate-to-Source Voltage (V)
16 ID = 20 A
Ciss
C - Capacitance (pF)
2000
12
1500
8
1000
Crss 4
500
Coss
0 0
0 40 80 120 160 200 0 10 20 30 40 50 60
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 72108 www.vishay.com
S-31511--Rev. B, 14-Jul-03 3
SUM27N20-78
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
3.0 100
VGS = 10 V
ID = 20 A
2.5
r DS(on) - On-Resistance (W)
I S - Source Current (A)
2.0
(Normalized)
TJ = 150_C TJ = 25_C
1.5 10
1.0
0.5
0.0 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 260
ID = 1.0 mA
100 240
(BR)DSS (V)
I Dav (a)
IAV (A) @ TA = 25_C
10 220
V
1 200
IAV (A) @ TA = 150_C
0.1 180
- 50 - 25 0 25 50 75 100 125 150 175
0.00001 0.0001 0.001 0.01 0.1 1
tin (Sec) TJ - Junction Temperature (_C)
www.vishay.com Document Number: 72108
4 S-31511--Rev. B, 14-Jul-03
SUM27N20-78
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
30 100
10 ms
Limited by rDS(on)
25
100 ms
I D - Drain Current (A)
I D - Drain Current (A)
20 10
15
1 ms
10 ms
10 1
100 ms, dc
TC = 25_C
5 Single Pulse
0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100 1000
TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1
Square Wave Pulse Duration (sec)
Document Number: 72108 www.vishay.com
S-31511--Rev. B, 14-Jul-03 5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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