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Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.130 @ VGS = - 4.5 V - 2.3
- 20
0.190 @ VGS = - 2.5 V - 1.9
TO-236
(SOT-23)
G 1
3 D Ordering Information: Si2301DS-T1
S 2
Top View
Si2301DS (A1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 20
V
Gate-Source Voltage VGS "8
TA= 25_C - 2.3
Continuous Drain Current (TJ = 150_C)b ID
TA= 70_C - 1.5
A
Pulsed Drain Currenta IDM - 10
Continuous Source Current (Diode Conduction)b IS - 1.6
TA= 25_C 1.25
Power Dissipationb PD W
TA= 70_C 0.8
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambientb 100
RthJA _C/W
Maximum Junction-to-Ambientc 166
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70627 www.vishay.com
S-31990--Rev. E, 13-Oct-03 1
Si2301DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 mA - 20
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 0.45
Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA
VDS = - 20 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 20 V, VGS = 0 V, TJ = 55_C - 10
VDS v - 5 V, VGS = - 4.5 V -6
On State Drain Currenta
On-State ID( )
D(on) A
VDS v - 5 V, VGS = - 2.5 V -3
VGS = - 4.5 V, ID = - 2.8 A 0.105 0.130
Drain Source On Resistancea
Drain-Source On-Resistance rDS( )
DS(on) W
VGS = - 2.5 V, ID = - 2.0 A 0.145 0.190
Forward Transconductancea gfs VDS = - 5 V, ID = - 2.8 A 6.5 S
Diode Forward Voltage VSD IS = - 1.6 A, VGS = 0 V - 0.80 - 1.2 V
Dynamicb
Total Gate Charge Qg 5.8 10
Gate-Source Charge Qgs VDS = - 6 V, VGS = - 4.5 V 0.85 nC
ID ^ - 2.8 A
Gate-Drain Charge Qgd 1.70
Input Capacitance Ciss 415
Output Capacitance Coss VDS = - 6 V, VGS = 0, f = 1 MHz 223 pF
Reverse Transfer Capacitance Crss 87
Switchingc
td(on) 13.0 25
Turn-On
Turn On Time
tr VDD = - 6 V, RL = 6 W 36.0 60
ID ^ - 1 0 A VGEN = - 4.5 V
1.0 A, 45 ns
td(off) RG = 6 W 42 70
Turn-Off Time
tf 34 60
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 70627
2 S-31990--Rev. E, 13-Oct-03
Si2301DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
10 10
VGS = 5, 4.5, 4, 3.5, 3 V
2.5 V TC = - 55_C
8 8
I D - Drain Current (A)
I D - Drain Current (A)
25_C
6 6
125_C
2V
4 4
2 0, 0.5, 1 V 2
1.5 V
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.6 1000
0.5
800
r DS(on)- On-Resistance ( W )
C - Capacitance (pF)
0.4
600
0.3 Ciss
VGS = 2.5 V
400
0.2 Coss
VGS = 4.5 V Crss
200
0.1
0.0 0
0 2 4 6 8 10 0 3 6 9 12
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.8
VDS = 6 V VGS = 4.5 V
ID = 2.8 A ID = 2.8 A
1.6
4
V GS - Gate-to-Source Voltage (V)
r DS(on)- On-Resistance ( W )
1.4
3
(Normalized)
1.2
2
1.0
1
0.8
0 0.6
0 2 4 6 8 - 50 0 50 100 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70627 www.vishay.com
S-31990--Rev. E, 13-Oct-03 3
Si2301DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.6
0.5
r DS(on)- On-Resistance ( W )
I S - Source Current (A)
0.4
TJ = 150_C
0.3 ID = 2.8 A
TJ = 25_C
0.2
0.1
1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 14
0.3 12
10
0.2
VGS(th) Variance (V)
ID = 250 mA
Power (W)
8
0.1 TC = 25_C
Single Pulse
6
0.0
4
- 0.1
2
- 0.2 0
- 50 0 50 100 150 0.01 0.10 1.00 10.00
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70627
4 S-31990--Rev. E, 13-Oct-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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