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Si2306DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY FEATURES
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A)
D 100% Rg Tested
0.057 @ VGS = 10 V 3.5
30
0.094 @ VGS = 4.5 V 2.8
-
TO-236
(SOT-23)
G 1
3 D
S 2
Top View
Si2306DS (A6)*
*Marking Code
Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 3.5
Continuous Drain Current (TJ = 150_C)a, b ID
TA = 70_C 2.8
A
Pulsed Drain Current IDM 16
Continuous Source Current (Diode Conduction)a, b IS 1.25
TA = 25_C 1.25
Maximum Power Dissipationa, b PD W
TA = 70_C 0.80
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 5 sec 100
Maximum Junction to Ambienta
Junction-to-Ambient RthJA _C/W
Steady State 130
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec.
Document Number: 70827 www.vishay.com
S-31873--Rev. C, 15-Sep-03 1
Si2306DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 0.5
Zero Gate Voltage Drain Current IDSS mA
VDS = 30 V, VGS = 0 V, TJ = 55_C 10
VDS w 4.5 V, VGS = 10 V 6
On State Drain Currenta
On-State ID( )
D(on) A
VDS w 4.5 V, VGS = 4.5 V 4
VGS = 10 V, ID = 3.5 A 0.046 0.057
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = 4.5 V, ID = 2.8 A 0.070 0.094
Forward Transconductancea gfs VDS = 4.5 V, ID = 3.5 A 6.9 S
Diode Forward Voltagea VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 3.5 A 4.2 7
Total Gate Charge Qgt 8.5 20
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 3.5 A
, , 1.9
Gate-Drain Charge Qgd 1.35
Gate Resistance Rg 0.5 2.4 W
Input Capacitance Ciss 555
Output Capacitance Coss ,
VDS = 15 V, VGS = 0 V, f= 1 MHz
, 120 p
pF
Reverse Transfer Capacitance Crss 60
Switching
Turn-On Delay Time td(on) 9 20
Rise Time tr 7.5 18
VDD = 15 V, RL = 15 W
ns
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 17 35
Fall Time tf 5.2 12
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com Document Number: 70827
2 S-31873--Rev. C, 15-Sep-03
Si2306DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
16 16
VGS = 10 thru 5 V
12 12
I D - Drain Current (A)
I D - Drain Current (A)
8 4V 8
TC = 125_C
4 4
25_C
3 thru 1 V - 55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.5 800
700
0.4
r DS(on) - On-Resistance ( W )
Ciss
600
C - Capacitance (pF)
500
0.3
400
0.2
300
Coss
VGS = 4.5 V 200
0.1
VGS = 10 V
100
Crss
0.0 0
0 4 8 12 16 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
8 ID = 3.5 A 1.4 ID = 3.5 A
r DS(on) - On-Resistance (W)
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70827 www.vishay.com
S-31873--Rev. C, 15-Sep-03 3
Si2306DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.5
0.4
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
0.3
TJ = 150_C
0.2
ID = 3.5 A
TJ = 25_C 0.1
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 12
ID = 250 mA 10
0.2
V GS(th) Variance (V)
- 0.0 8
Power (W)
- 0.2 6
TA = 25_C
- 0.4 4
- 0.6 2
- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 500
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2 Notes:
0.1 PDM
0.1
0.05 t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 130_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 500
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70827
4 S-31873--Rev. C, 15-Sep-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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