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Si2314EDS
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A) D ESD Protected: 3000 V
0.033 @ VGS = 4.5 V 4.9
D RoHS Compliant Pb-free
Available
20 0.040 @ VGS = 2.5 V 4.4 APPLICATIONS
0.051 @ VGS = 1.8 V 3.9 D LI-lon Battery Protection
D
TO-236
(SOT-23)
G 1
3 D 3 kW
G
S 2
Top View
Si2314EDS (C4)*
S
*Marking Code N-Channel
Ordering Information: Si2314EDS-T1
Si2314EDS-T1--E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS "12
TA= 25_C 4.9 3.77
Continuous Drain Current (TJ = 150_C)a ID
TA= 70_C 3.9 3.0
A
Pulsed Drain Currentb IDM 15
Avalanche Currentb IAS 15
L = 0 1 mH
0.1
Single Avalanche Energy EAS 11.25 mJ
Continuous Source Current (Diode Conduction)a IS 1.0 A
TA= 25_C 1.25 0.75
Power Dissipationa PD W
TA= 70_C 0.80 0.48
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 5 sec 75 100
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady State 120 166 C/W
_C/W
Maximum Junction-to-Foot Steady State RthJF 40 50
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71611 www.vishay.com
S-50574--Rev. C, 04-Apr-05 1
Si2314EDS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.45 0.95
Gate-Body Leakage IGSS VDS = 0 V, VGS = "4.5 V "1.5
VDS = 20 V, VGS = 0 V 1 mA
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V, TJ = 70_C 75
On-State Drain Currenta ID(on) VDS w 10 V, VGS = 4.5 V 15 A
VGS = 4.5 V, ID = 5.0 A 0.027 0.033
Drain-Source On-Resistancea
S O rDS(on) VGS = 2.5 V, ID = 4.5 A 0.033 0.040 W
VGS = 1.8 V, ID = 4.0 A 0.042 0.051
Forward Transconductancea gfs VDS = 15 V, ID = 5.0 A 40 S
Diode Forward Voltage VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg 11.0 14.0
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 1.5 nC
Gate-Drain Charge Qgd 2.1
Switching
Turn-On Delay Time td(on) 0.53 0.8
Rise Time tr VDD = 10 V, RL = 10 W 1.4 2.2
ms
Turn-Off Delay Time td(off) ID ^ 1.0 A, VGEN = 4.5 V, Rg = 6 W 13.5 20
Fall-Time tf 5.9 9
Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 A/ms 13 25 ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage
1200 10,000
1,000
1000
I GSS - Gate Current (mA)
100
I GSS - Gate Current (mA)
800
10
600 1 TJ = 150_C
0.1
400
TJ = 25_C
0.01
200
0.001
0 0.0001
0 2 4 6 8 10 12 0.1 1 10 100
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71611
2 S-50574--Rev. C, 04-Apr-05
Si2314EDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
15 15
VGS = 4.5 thru 2.0 V
12 12
I D - Drain Current (A)
I D - Drain Current (A)
1.5 V
9 9
6 6
TC = 125_C
3 3
0.5 V 25_C
1.0 V -55_C
0 0
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.15 1500
r DS(on) - On-Resistance ( W )
0.12 1200
C - Capacitance (pF)
Ciss
0.09 900
0.06 600
VGS = 1.8 V
VGS = 2.5 V
0.03 300 Coss
Crss
VGS = 4.5 V
0.00 0
0 3 6 9 12 15 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
8 1.6
VDS = 10 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)
ID = 5.0 A ID = 5.0 A
1.4
6
rDS(on) - On-Resiistance
(Normalized)
1.2
4
1.0
2
0.8
0 0.6
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 71611 www.vishay.com
S-50574--Rev. C, 04-Apr-05 3
Si2314EDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.20
10
ID = 5.0 A
r DS(on) - On-Resistance ( W )
TJ = 150_C 0.15
I S - Source Current (A)
1
0.10
TJ = 25_C
0.1
0.05
0.01 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.2 12
0.1 10
ID = 250 mA
V GS(th) Variance (V)
-0.0 8
Power (W)
TA = 25_C
-0.1 6
-0.2 4
-0.3 2
-0.4 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 166_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71611.
www.vishay.com Document Number: 71611
4 S-50574--Rev. C, 04-Apr-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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