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                     SI4410DY
                     N-channel TrenchMOS logic level FET
                     Rev. 03 -- 4 December 2009                                             Product data sheet



1. Product profile

          1.1 General description
              Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
              package using TrenchMOS technology. This product is designed and qualified for use in
              computing, communications, consumer and industrial applications only.

          1.2 Features and benefits
                     Low conduction losses due to low                     Suitable for high frequency
                     on-state resistance                                  applications due to fast switching
                                                                          characteristics

          1.3 Applications
                     DC motor control                                     Notebook computers
                     DC-to-DC convertors                                  Portable equipment
                     Lithium-ion battery applications

          1.4 Quick reference data
              Table 1.     Quick reference
              Symbol Parameter                  Conditions                            Min    Typ    Max    Unit
              VDS         drain-source voltage Tj  25 

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