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Si4812DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY FEATURES
VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Power MOSFET
0.018 @ VGS = 10 V 9 D 100% Rg Tested
30
0.028 @ VGS = 4.5 V 7.3
SCHOTTKY PRODUCT SUMMARY
VSD (V)
VDS (V) Diode Forward Voltage IF (A)
30 0.50 V @ 1.0 A 1.4
D
SO-8
S 1 8 D
Ordering Information:
S 2 7 D
Si4812DY
S D Si4812DY-T1 (with Tape and Reel) Schottky Diode
3 6
Si4812DY--E3 (Lead (Pb)-Free) G
G 4 5 D Si4812DY-T1--E3 (Lead (Pb)-Free with Tape and Reel)
N-Channel MOSFET
Top View
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage (MOSFET) 30
VDS
Reverse Voltage (Schottky) 30 V
Gate-Source Voltage (MOSFET) VGS "20
TA = 25_C 9 6.9
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b ID
TA = 70_C 7.5 5.6
Pulsed Drain Current (MOSFET) IDM 50
A
Continuous Source Current (MOSFET Diode Conduction)a, b IS 2.1 1.2
Average Foward Current (Schottky) IF 1.4 0.8
Pulsed Foward Current (Schottky) IFM 30
TA = 25_C 2.5 1.4
Maximum Power Dissipation (MOSFET)a b
a,
TA = 70_C 1.6 0.9
PD W
TA = 25_C 2.0 1.2
Maximum Power Dissipation (Schottky)a b
a,
TA = 70_C 1.3 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 40 50
Junction-to-Ambient (t v 10 sec)a
Maximum J
M i ti t A bi t )
Schottky 50 60
RthJA _C/W
MOSFET 72 90
Maximum Junction to Ambient (t = steady state)a
Junction-to-Ambient
Schottky 85 100
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71775 www.vishay.com
S-41426--Rev. G, 26-Jul-04 1
Si4812DY
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 0.004 0.100
Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V, TJ = 100_C 0.7 10
IDSS mA
(MOSFET + Schottky)
VDS = 30 V, VGS = 0 V, TJ = 125_C 3.0 20
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 9 A 0.012 0.018
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = 4.5 V, ID = 7.3 A 0.019 0.028
Forward Transconductancea gfs VDS = 15 V, ID = 9 A 23 S
IS = 1.0 A, VGS = 0 V 0.45 0.50
Schottky Diode Forward Voltagea VSD V
IS = 1.0 A, VGS = 0 V, TJ = 125_C 0.33 0.42
Dynamicb
Total Gate Charge Qg 13 24
Gate-Source Charge Qgs VDS = 15 V, VGS = 5 V, ID = 9 A 4 nC
Gate-Drain Charge Qgd 5.7
Gate Resistance Rg 0.2 2.4 W
Turn-On Delay Time td(on) 16 25
Rise Time tr 10 20
VDD = 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, Rg = 6 W 35 50 ns
Fall Time tf 13 20
Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 A/ms 35 70
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71775
2 S-41426--Rev. G, 26-Jul-04
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 50
VGS = 10 thru 5 V
40 40
I D - Drain Current (A)
I D - Drain Current (A)
4V
30 30
20 20
TC = 125_C
10 10
3V 25_C
-55_C
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.10 1800
1500
r DS(on) - On-Resistance ( W )
0.08
C - Capacitance (pF)
Ciss
1200
0.06
900
0.04
600 Coss
VGS = 4.5 V
Crss
0.02 VGS = 10 V 300
0.00 0
0 10 20 30 40 50 0 5 10 15 20 25 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
8 ID = 9 A 1.4 ID = 9 A
rDS(on) - On-Resiistance
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 71775 www.vishay.com
S-41426--Rev. G, 26-Jul-04 3
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.10
TJ = 150_C 0.08
r DS(on) - On-Resistance ( W )
10
I S - Source Current (A)
0.06 ID = 9.0 A
TJ = 25_C 0.04
1
0.02
0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Reverse Current (Schottky) Single Pulse Power (MOSFET)
20 50
10
I R - Reverse Current (mA)
40
1
30 V
Power (W)
30
0.1
10 V 20
0.01
10
0.001 20 V
0.0001 0
0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Junction Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 72_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71775
4 S-41426--Rev. G, 26-Jul-04
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
PDM
0.1
0.05 t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 85_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
Document Number: 71775 www.vishay.com
S-41426--Rev. G, 26-Jul-04 5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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