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Si4814DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY FEATURES
VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Integrated Schottky
0.021 @ VGS = 10 V 7.0 D Alternative Pinning for Additional Layout
Channel-1
Channel 1 Options
0.0325 @ VGS = 4.5 V 5.6
30 D 100% Rg Tested
0.020 @ VGS = 10 V 7.4
Channel-2
Channel 2
0.0265 @ VGS = 4.5 V 6.4 APPLICATIONS
D DC/DC Converters
- Notebook
SCHOTTKY PRODUCT SUMMARY
D1
VSD (V)
VDS (V) Diode Forward Voltage IF (A)
30 0.50 V @ 1.0 A 2.0
SO-8
G1
D1 1 8 G1
N-Channel 1
D1 S1/D2 MOSFET S1/D2
2 7
G2 3 6 S1/D2
S2 4 5 S1/D2 Schottky Diode
G2
Top View N-Channel 2
MOSFET
Ordering Information: Si4814DY S2
Si4814DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1 Channel-2
Parameter Symbol 10 secs Steady State 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS 20
TA = 25_C 7.0 5.5 7.4 5.7
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 5.6 4.3 6 4.5
A
Pulsed Drain Current IDM 40 40
Continuous Source Current (Diode Conduction)a IS 1.7 1.0 1.8 0.95
TA = 25_C 1.9 1.1 2.0 1.16
Maximum Power Dissipationa PD W
TA = 70_C 1.2 0.71 1.3 0.74
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Channel-1 Channel-2
Parameter Symbol Typ Max Typ Max Unit
t v 10 sec 52 65 47 60
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady-State 90 112 85 107 C/W
_C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJF 30 38 28 35
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71685 www.vishay.com
S-32124--Rev. E, 27-Oct-03 1
Si4814DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Ch-1 0.8
Gate Threshold Voltage VGS( h)
GS(th) VDS = VGS, ID = 250 mA V
Ch-2 0.8
Ch-1 100
Gate-Body
Gate Body Leakage IGSS VDS = 0 V, VGS = 20 V
V nA
Ch-2 100
Ch-1 1
VDS = 30 V, VGS = 0 V
V
Ch-2 100
Zero Gate Voltage Drain Current IDSS mA
Ch-1 15
VDS = 30 V, VGS = 0 V TJ = 85_C
V V,
Ch-2 2000
Ch-1 20
On State Drain Currentb
On-State ID( )
D(on) VDS = 5 V, VGS = 10 V
V A
Ch-2 20
VGS = 10 V, ID = 7.0 A Ch-1 0.0175 0.021
VGS = 10 V, ID = 7.4 A Ch-2 0.0165 0.020
Drain Source On State Resistanceb
Drain-Source On-State rDS( )
DS(on) W
VGS = 4.5 V, ID = 5.6 A Ch-1 0.027 0.0325
VGS = 4.5 V, ID = 6.4 A Ch-2 0.022 0.0265
VDS = 15 V, ID = 7.0 A Ch-1 17
Forward Transconductanceb gf
fs S
VDS = 15 V, ID = 7.4 A Ch-2 20
IS = 1.7 A, VGS = 0 V Ch-1 0.7 1.1
Diode Forward Voltageb VSD V
IS = 1 A, VGS = 0 V Ch-2 0.47 0.5
Dynamica
Ch-1 6.5 10
Total Gate Charge Qg
Channel-1 Ch-2 9.7 15
VDS = 15 V, VGS = 5 V, ID = 7.0 A Ch-1 1.5
Gate-Source
Gate Source Charge Qgs nC
Channel 2
Channel-2 Ch-2 2.6
VDS = 15 V, VGS = 5 V ID = -7.4 A
1 V V, Ch-1 2.7
Gate-Drain
Gate Drain Charge Qgd
d
Ch-2 3.8
Ch-1 0.5 1.6 2.6
Gate Resistance Rg W
Ch-2 0.5 1.8 3.1
Ch-1 12 20
Turn-On
Turn On Delay Time td( )
d(on)
Ch-2 13 20
Channel-1
Channel 1
VDD = 15 V, RL = 15 W Ch-1 13 20
Rise Time tr
ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-2 13 20
Channel 2
Channel-2 Ch-1 22 35
Turn-Off
Turn Off Delay Time td( ff)
d(off) VDD = 1 V RL = 1 W
15 V, 15 ns
Ch-2 29 45
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Ch-1 8 15
Fall Time tf
Ch-2 12 20
IF = 1.3 A, di/dt = 100 A/ms Ch-1 50 80
Source-Drain
Source Drain Reverse Recovery Time trr
IF = 2.2 A, di/dt = 100 mA/ms Ch-2 46 80
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 1.0 A 0.47 0.50
Forward Voltage Drop VF V
IF = 1.0 A, TJ = 125_C 0.36 0.42
Vr = 30 V 0.004 0.100
Maximum Reverse Leakage Current Irm Vr = 30 V, TJ = 100_C 0.7 10 mA
Vr = -30 V, TJ = 125_C 3.0 20
Junction Capacitance CT Vr = 10 V 50 pF
www.vishay.com Document Number: 71685
2 S-32124--Rev. E, 27-Oct-03
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1
Output Characteristics Transfer Characteristics
40 40
VGS = 10 thru 5 V
32 32
4V
I D - Drain Current (A)
I D - Drain Current (A)
24 24
16 16
3V TC = 125_C
8 8
25_C
-55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 750
Ciss
0.04 600
DS(on) - On-Resistance ( W )
C - Capacitance (pF)
VGS = 4.5 V
0.03 450
VGS = 10 V
0.02 300 Coss
Crss
0.01 150
r
0.00 0
0 8 16 24 32 40 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.8
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 7 A ID = 7 A
1.6
r DS(on) - On-Resistance (W)
4
(Normalized)
1.4
3
1.2
2
1.0
1
0.8
0 0.6
0.0 1.5 3.0 4.5 6.0 7.5 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 71685 www.vishay.com
S-32124--Rev. E, 27-Oct-03 3
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.10
0.08
DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
10 0.06
TJ = 25_C 0.04
ID = 7 A
0.02
r
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
120
0.4
100
0.2 ID = 250 mA
V GS(th) Variance (V)
80
Power (W)
-0.0
60
-0.2
40
-0.4
20
-0.6
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)
Safe Operating Area
100
rDS(on) Limited IDM Limited
10
I D - Drain Current (A)
1 ms
1 ID(on) 10 ms
Limited
100 ms
TC = 25_C 1s
0.1 Single Pulse
10 s
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
www.vishay.com Document Number: 71685
4 S-32124--Rev. E, 27-Oct-03
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71685 www.vishay.com
S-32124--Rev. E, 27-Oct-03 5
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2
Output Characteristics Transfer Characteristics
40 40
VGS = 10 thru 4 V
32 32
I D - Drain Current (A)
I D - Drain Current (A)
24 24
16 3V 16
TC = 125_C
8 8
25_C
-55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 1500
0.04 1200
r DS(on) - On-Resistance ( W )
C - Capacitance (pF)
Ciss
0.03 900
VGS = 4.5 V
0.02 600 Coss
VGS = 10 V
0.01 300 Crss
0.00 0
0 8 16 24 32 40 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.8
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 7.4 A 1.6 ID = 7.4 A
4
r DS(on) - On-Resistance (W)
1.4
(Normalized)
3
1.2
2
1.0
1
0.8
0 0.6
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
www.vishay.com Document Number: 71685
6 S-32124--Rev. E, 27-Oct-03
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.10
0.08
DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
10 0.06
TJ = 25_C 0.04
ID = 7.4 A
0.02
r
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Reverse Current vs. Junction Temperature Single Pulse Power, Junction-to-Ambient
10 120
1 100
I R - Reverse Current (mA)
1-1 80
Power (W)
1-2 60
30 V
24 V
1-3 40
1-4 20
1-5 0
0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)
Safe Operating Area
100
rDS(on) Limited IDM Limited
10
I D - Drain Current (A)
1 ms
1 ID(on) 10 ms
Limited
100 ms
TC = 25_C 1s
0.1 Single Pulse 10 s
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Document Number: 71685 www.vishay.com
S-32124--Rev. E, 27-Oct-03 7
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2 Notes:
0.1 PDM
0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = RthJA = 85_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71685
8 S-32124--Rev. E, 27-Oct-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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