Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors Vishay si4834dy
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download si4834dy documenatation <<
Text preview - extract from the document
Si4834DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.022 @ VGS = 10 V 7.5
30
0.030 @ VGS = 4.5 V 6.5
SCHOTTKY PRODUCT SUMMARY
VSD (v)
VDS (V) Diode Forward Voltage IF (A)
30 0.50 V @ 1.0 A 2.0
D1 D1 D2 D2
SO-8
S1 1 8 D1
G1 2 7 D1 Schottky Diode
G1 G2
S2 3 6 D2
G2 4 5 D2
Top View
S1 S2
Ordering Information: Si4834DY
Si4834DY-T1 (with Tape and Reel)
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 7.5 5.7
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 6.0 4.6
A
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 1.7 0.9
TA = 25_C 2.0 1.1
Maximum Power Dissipationa PD W
TA = 70_C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
MOSFET Schottky
Parameter Symbol Typ Max Typ Max Unit
t v 10 sec 52 62.5 53 62.5
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady-State 93 110 93 110 _C/W
C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJC 35 40 35 40
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71183 www.vishay.com
S-31062--Rev. B, 26-May-03 1
Si4834DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Ch 1
Ch-1 100
VDS = 24 V, VGS = 0 V
V
Ch-2 1
Zero Gate Voltage Drain Current IDSS mA
Ch 1
Ch-1 2000
VDS = 24 V, VGS = 0 V TJ = 85_C
V V,
Ch-2 15
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 7.5 A 0.018 0.022
Drain Source On State Resistanceb
Drain-Source On-State rDS( )
DS(on) W
VGS = 4.5 V, ID = 6.5 A 0.024 0.030
Forward Transconductanceb gfs VDS = 15 V, ID = 7.5 A 22 S
Ch 1
Ch-1 0.47 0.5
Diode Forward Voltageb VSD IS = 1 A VGS = 0 V
A, V
Ch-2 0.8 1.2
Dynamica
Total Gate Charge Qg 13 20
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7.5 A
, , 2 nC
Gate-Drain Charge Qgd 2.7
Gate Resistance Rg 0.5 1.9 3.2 W
Turn-On Delay Time td(on) 8 16
Rise Time tr VDD = 15 V, RL = 15 W 10 20
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 21 40
ns
Fall Time tf 10 20
Ch 1
Ch-1 32 70
Source-Drain
Source Drain Reverse Recovery Time trr IF = 1 7 A di/dt = 100 A/ms
1.7 A,
Ch-2 40 80
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 1.0 A 0.47 0.50
Forward Voltage Drop VF V
IF = 1.0 A, TJ = 125_C 0.36 0.42
Vr = 30 V 0.004 0.100
Maximum Reverse Leakage Current
g Irm Vr = 30 V, TJ = 100_C 0.7 10 mA
Vr = - 30 V, TJ = 125_C 3.0 20
Junction Capacitance CT Vr = 10 V 50 pF
www.vishay.com Document Number: 71183
2 S-31062--Rev. B, 26-May-03
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Output Characteristics Transfer Characteristics
20 20
VGS = 10 thru 4 V 3V
16 16
I D - Drain Current (A)
I D - Drain Current (A)
12 12
8 8
TC = 125_C
4 4
2V 25_C
- 55_C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.040 1000
r DS(on) - On-Resistance ( W )
0.032 800
C - Capacitance (pF)
Ciss
VGS = 4.5 V
0.024 600
VGS = 10 V
0.016 400
Coss
0.008 200 Crss
0.000 0
0 4 8 12 16 20 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 7.5 A ID = 7.5 A
r DS(on) - On-Resistance (W)
8 1.4
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 71183 www.vishay.com
S-31062--Rev. B, 26-May-03 3
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.04
TJ = 150_C ID = 7.5 A
r DS(on) - On-Resistance ( W )
10
0.03
I S - Source Current (A)
0.02
TJ = 25_C
0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
0.2 40
ID = 250 mA
V GS(th) Variance (V)
- 0.0
30
Power (W)
- 0.2
20
- 0.4
10
- 0.6
- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 10 -3 10 -2 10 -1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 93_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71183
4 S-31062--Rev. B, 26-May-03
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY
Reverse Current vs. Junction Temperature Forward Voltage Drop
20
10
10
TJ = 150_C
I R - Reverse Current (mA)
I F - Forward Current (A)
1
0.1 30 V
TJ = 25_C
24 V
0.01
0.001
0.0001 1
0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
TJ - Temperature (_C) VF - Forward Voltage Drop (V)
Capacitance
200
160
C - Capacitance (pF)
120
80
Coss
40
0
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
Document Number: 71183 www.vishay.com
S-31062--Rev. B, 26-May-03 5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo