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Si4835BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A) Qg (Typ) D Advanced High Cell Density Process
0.018 @ VGS = -10 V
D 100% Rg Tested
-9.6
-30 -25
0.030 @ VGS = -4.5 V -7.5 APPLICATIONS
D Load Switches
- Notebook PCs
- Desktop PCs
S
SO-8
S 1 8 D
S 2 7 D G
S 3 6 D
G 4 5 D
Top View D
P-Channel MOSFET
Ordering Information: Si4835BDY
Si4835BDY-T1 (with Tape and Reel)
Si4835BDY--E3 (Lead (Pb)-Free)
Si4835BDY-T1--E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS "25
TA = 25_C -9.6 -7.4
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C -7.7 -5.9
A
Pulsed Drain Current IDM -50
continuous Source Current (Diode Conduction)a IS -2.1 -1.3
TA = 25_C 2.5 1.5
Maximum Power Dissipationa PD W
TA = 70_C 1.6 0.9
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 10 sec 39 50
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady State 70 85 C/W
_C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72029 www.vishay.com
S-41912--Rev. D, 25-Oct-04 1
Si4835BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA -1.0 -3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "25 V "100 nA
VDS = -30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = -30 V, VGS = 0 V, TJ = 55_C -5
On-State Drain Currenta ID(on) VDS v -5 V, VGS = -10 V -50 A
VGS = -10 V, ID = -9.6 A 0.014 0.018
Drain Source On State Resistancea
Drain-Source On-State rDS( )
DS(on) W
VGS = -4.5 V, ID = -7.5 A 0.023 0.030
Forward Transconductancea gfs VDS = -15 V, ID = -9.6 A 30 S
Diode Forward Voltagea VSD IS = -2.1 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge Qg 25 37
Gate-Source Charge Qgs VDS = -15 V, VGS = -5 V, ID = -9.6 A 6.5 nC
Gate-Drain Charge Qgd 12.5
Gate Resistance Rg 1.0 2.9 4.9 W
Turn-On Delay Time td(on) 15 25
Rise Time tr VDD = -15 V, RL = 15 W 13 20
Turn-Off Delay Time td(off) ID ^ -1 A, VGEN = -10 V, Rg = 6 W 60 100 ns
Fall Time tf 45 70
Source-Drain Reverse Recovery Time trr IF = -2.1 A, di/dt = 100 A/ms 45 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 50
VGS = 10 thru 5 V TC = -55_C
25_C
40 40
4V
125_C
I D - Drain Current (A)
I D - Drain Current (A)
30 30
20 20
10 10
3V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 72029
2 S-41912--Rev. D, 25-Oct-04
Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.05 3200
r DS(on) - On-Resistance ( W )
0.04
C - Capacitance (pF)
2400
Ciss
0.03
VGS = 4.5 V
1600
0.02
VGS = 10 V
800 Coss
0.01
Crss
0.00 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 9.6 A ID = 9.6 A
8 1.4
rDS(on) - On-Resiistance
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
60 0.05
0.04
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
ID = 9.6 A
TJ = 150_C 0.03
10
0.02
TJ = 25_C
0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72029 www.vishay.com
S-41912--Rev. D, 25-Oct-04 3
Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 80
0.4
60
V GS(th) Variance (V)
ID = 250 mA
0.2
Power (W)
40
0.0
20
-0.2
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Safe Operating Area
100
IDM Limited
*rDS(on) Limited P(t) = 0.0001
10
I D - Drain Current (A)
P(t) = 0.001
ID(on) P(t) = 0.01
1
Limited
P(t) = 0.1
P(t) = 1
TA = 25_C
0.1 Single Pulse P(t) = 10
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72029
4 S-41912--Rev. D, 25-Oct-04
Si4835BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72029.
Document Number: 72029 www.vishay.com
S-41912--Rev. D, 25-Oct-04 5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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