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Si4835DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.019 @ VGS = - 10 V - 8.0
- 30
0.033 @ VGS = - 4.5 V - 6.0
S S S
SO-8
S 1 8 D
G
S 2 7 D
S 3 6 D
G 4 5 D
Top View
D D D D
Ordering Information: Si4835DY
Si4835DY-T1 (with Tape and Reel)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS "25
TA = 25_C - 8.0
Continuous Drain Current (TJ = 150_C)a, b ID
TA = 70_C - 6.4
A
Pulsed Drain Current IDM - 50
Continuous Source Current (Diode Conduction)a, b IS - 2.1
TA = 25_C 2.5
Maximum Power Dissipationa, b PD W
TA = 70_C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 10 sec 50
Maximum Junction to Ambienta
Junction-to-Ambient RthJA _C/W
Steady State 70
Notes
a. Surface Mounted on FR4 Board.
b. t v10 sec.
Document Number: 70836 www.vishay.com
S-31062--Rev. B, 26-May-03 1
Si4835DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "25 V "100 nA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 30 V, VGS = 0 V, TJ = 70_C -5
VDS w - 5 V, VGS = - 10 V - 40
On State Drain Currenta
On-State ID( )
D(on) A
VDS w - 5 V, VGS = - 4.5 V - 10
VGS = - 10 V, ID = - 8.0 A 0.0155 0.019
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = - 4.5 V, ID = - 5.0 A 0.027 0.033
Forward Transconductancea gfs VDS = - 15 V, ID = - 8.0 A 17 S
Diode Forward Voltagea VSD IS = - 2.1 A, VGS = 0 V - 0.75 - 1.2 V
Dynamicb
Total Gate Charge Qg 21 31
Gate-Source Charge Qgs VDS = - 10 V, VGS = - 5 V, ID = - 4.6 A 6.5 nC
Gate-Drain Charge Qgd 8
Gate Resistance Rg 1.0 2.6 4.4 W
Turn-On Delay Time td(on) 16 30
Rise Time tr 13 25
VDD = - 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 56 100 ns
Fall Time tf 30 60
Source-Drain Reverse Recovery Time trr IF = - 2.1 A, di/dt = 100 A/ms 40 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 70836
2 S-31062--Rev. B, 26-May-03
Si4835DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 50
VGS = 6 thru 10 V TC = - 55_C
5V
25_C
40 40
I D - Drain Current (A)
I D - Drain Current (A)
125_C
30 30
4V
20 20
10 10
2V 3V
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 3500
3000
r DS(on) - On-Resistance ( W )
Ciss
0.15
C - Capacitance (pF)
2500
2000
0.10
1500
1000 Coss
0.05 VGS = 4.5 V
VGS = 10 V 500
Crss
0.00 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.8
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
1.6
8 ID = 4.6 A ID = 8.0 A
r DS(on) - On-Resistance (W)
1.4
(Normalized)
6
1.2
1.0
4
0.8
2
0.6
0 0.4
0 10 20 30 40 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70836 www.vishay.com
S-31062--Rev. B, 26-May-03 3
Si4835DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.10
0.08
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
10
TJ = 150_C
0.06
0.04
TJ = 25_C ID = 8.0 A
0.02
1 0.00
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
1.0 80
0.8 ID = 250 mA
60
0.6
V GS(th) Variance (V)
Power (W)
0.4
40
0.2
0.0
20
- 0.2
- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2 Notes:
0.1 PDM
0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
0.02
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70836
4 S-31062--Rev. B, 26-May-03
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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