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                                                                                                                    Si6820DQ
                                                                                                        Vishay Siliconix

              N-Channel, Reduced Qg, MOSFET with Schottky Diode


 MOSFET PRODUCT SUMMARY
   VDS (V)                    rDS(on) (W)                  ID (A)
                          0.160 @ VGS = 4.5 V              "1.9
      20
                          0.260 @ VGS = 3.0 V              "1.5


 SCHOTTKY PRODUCT SUMMARY
                           VF (v)
   VKA (V)         Diode Forward Voltage                   IF (A)
      20                      0.5 V @ 1 A                   1.5
                                                                                D                               K

                                 TSSOP-8

                 D    1     D                      8   K            G
                 S    2          Si6820DQ          7   A
                 S    3                            6   A
                 G    4                            5   A
                                                                                S                               A
                                  Top View


 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
                                      Parameter                                     Symbol               Limit              Unit
 Drain-Source Voltage (MOSFET)                                                       VDS                  20
 Reverse Voltage (Schottky)                                                          VKA                  20                  V
 Gate-Source Voltage (MOSFET)                                                        VGS                 "12

                                                                    TA = 25_C                            "1.9
 Continuous Drain Current (TJ = 150_C) (MOSFET)a, b
                                150 C)                                                ID
                                                                    TA = 70_C                            "1.5
 Pulsed Drain Current (MOSFET)                                                        IDM                 "8
                                                                                                                              A
 Continuous Source Current (MOSFET Diode Conduction)a, b                              IS                  1.0
 Average Foward Current (Schottky)                                                     IF                 1.5
 Pulsed Foward Current (Schottky)                                                     IFM                 30
                                                                    TA = 25_C                             1.2
 Maximum Power Dissipation (MOSFET)a, b
                                                                    TA = 70_C                            0.76
                                                                                      PD                                      W
                                                                    TA = 25_C                             1.0
 Maximum Power Dissipation (Schottky)a, b
                                                                    TA = 70_C                            0.64
 Operating Junction and Storage Temperature Range                                   TJ, Tstg           

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