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Si9410DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.030 @ VGS = 10 V 7.0
30 0.040 @ VGS = 5 V 6.0
0.050 @ VGS = 4.5 V 5.4
D D D D
SO-8
N/C 1 8 D
S 2 7 D
G
S 3 6 D
G 4 5 D
Top View
S S
Ordering Information: Si9410DY
Si9410DY-T1 (with Tape and Reel) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 7.0
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 5.8
A
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 2.8
TA = 25_C 2.5
Maximum Power Dissipationa PD W
TA = 70_C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 50 _C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70122 www.vishay.com
S-31060--Rev. M, 26-May-03 1
Si9410DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 24 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS mA
VDS = 24 V, VGS = 0 V, TJ = 55_C 25
On-State Drain Currentb ID(on) VDS w 5 V, VGS = 10 V 30 A
VGS = 10 V, ID =7.0 A 0.024 0.030
Drain-Source On-State Resistanceb rDS(on) VGS = 5 V, ID = 4.0 A 0.030 0.040 W
VGS = 4.5 V, ID = 3.5 A 0.032 0.050
Forward Transconductanceb gfs VDS = 15 V, ID = 7.0 A 15 S
Diode Forward Voltageb VSD IS = 2 A, VGS = 0 V 0.72 1.1 V
Dynamica
Total Gate Charge Qg 24 50
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7 A 2.8 nC
Gate-Drain Charge Qgd 4.6
Turn-On Delay Time td(on) 14 30
Rise Time tr 10 60
VDD = 25 V, RL = 25 W
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 46 150 ns
Fall Time tf 17 140
Source-Drain Reverse Recovery Time trr IF = 2 A, di/dt = 100 A/ms 60
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com Document Number: 70122
2 S-31060--Rev. M, 26-May-03
Si9410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 30
VGS = 10, 9, 8, 7, 6, 5 V
25 25
4V
I D - Drain Current (A)
I D - Drain Current (A)
20 20
15 15
10 3V 10 TC = 125_C
5 5 25_C
2V - 55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.06 2400
0.05 2000
r DS(on) - On-Resistance ( W )
C - Capacitance (pF)
0.04 1600
VGS = 4.5 V
Ciss
0.03 1200
0.02 10 V 800
Coss
0.01 400 Crss
0.00 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 2.0
VDS = 15 V VGS = 10 V
ID = 7 A ID = 7 A
V GS - Gate-to-Source Voltage (V)
8 1.6
r DS(on) - On-Resistance ( W )
(Normalized)
6 1.2
4 0.8
2 0.4
0 0.0
0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70122 www.vishay.com
S-31060--Rev. M, 26-May-03 3
Si9410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.30
0.25
r DS(on) - On-Resistance ( W )
TJ = 150_C ID = 3.2 A
I S - Source Current (A)
10 0.20
0.15
25_C
0.10
0.05
1 0.00
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 70
ID = 250 mA
60
50
V GS(th) Variance (V)
0.0
Power (W)
40
30
- 0.4
20
10
- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70122
4 S-31060--Rev. M, 26-May-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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