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2N4416/2N4416A/SST4416
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N4416 -v6 -30 4.5 5
2N4416A -2.5 to -6 -35 4.5 5
SST4416 -v6 -30 4.5 5
FEATURES BENEFITS APPLICATIONS
D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer
2N4416/A, Gps 13 dB (typ) @ D Very High System Sensitivity D Oscillator
400 MHz D High Quality of Amplification D Sample-and-Hold
D Very Low Noise: 3 dB (typ) @ D High-Speed Switching Capability D Very Low Capacitance Switches
400 MHz
D High Low-Level Signal Amplification
D Very Low Distortion
D High AC/DC Switch Off-Isolation
DESCRIPTION
The 2N4416/2N4416A/SST4416 n-channel JFETs are The TO-206AF (TO-72) hermetically-sealed package is
designed to provide high-performance amplification at high available with full military processing (see Military
frequencies. Information.) The TO-236 (SOT-23) package provides a
low-cost option and is available with tape-and-reel options
(see Packaging Information). For similar products in the
TO-226AA (TO-92) package, see the J304/305 data sheet.
TO-206AF
(TO-72)
TO-236
(SOT-23)
S C
1 4 D 1
3 G
S 2
2 3
D G
Top View
Top View
2N4416
2N4416A SST4416 (H1)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70242 www.vishay.com
S-50147--Rev. H, 24-Jan-05 1
2N4416/2N4416A/SST4416
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage : Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150 _C
(2N/SST4416) . . . . . . . . . . . . . . . . . . . . . -30 V
Power Dissipation : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW
(2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . -35 V
(SST Prefix)b . . . . . . . . . . . . . . . . . . . . 350 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C
Notes
Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . -65 to 200 _C a. Derate 2.4 mW/_C above 25_C
(SST Prefix) . . . . . . . . . . . . . . . . . -65 to 150_C b. Derate 2.8 mW/_C above 25_C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25_C UNLESS NOTED)
Limits
2N4416 2N4416A SST4416
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source
V(BR)GSS IG = -1 mA , VDS = 0 V -36 -30 -35 -30
Breakdown Voltage V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 1 nA -3 -6 -2.5 -6 -6
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 10 5 15 5 15 5 15 mA
VGS = -20 V, VDS = 0 V (2N) -2 -100 -100 pA
TA = 150_C -4 -100 -100
Gate Reverse Current IGSS
VGS = -15 V, VDS = 0 V (SST) -0.002 -1 nA
TA = 125_C -0.6
Gate Operating Current IG VDG = 10 V, ID = 1 mA -20
pA
Drain Cutoff Currentc ID(off) VDS = 10 V, VGS = -6 V 2
Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 300 mA 150 W
Gate-Source
VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Forward Voltagec
Dynamic
Common-Source
gfs 6 4.5 7.5 4.5 7.5 4.5 7.5 mS
Forward Transconductanceb VDS = 15 V, VGS = 0 V
Common-Source f = 1 kHz
gos 15 50 50 50 mS
Output Conductanceb
Common-Source
Ciss 2.2 4 4
Input Capacitance
Common-Source VDS = 15 V, VGS = 0 V
Crss 0.7 0.8 0.8 pF
Reverse Transfer Capacitance f = 1 MHz
Common-Source
Coss 1 2 2
Output Capacitance
Equivalent Input VDS = 10 V, VGS = 0 V nV/
en 6
Noise Voltagec f = 1 kHz Hz
www.vishay.com Document Number: 70242
2 S-50147--Rev. H, 24-Jan-05
2N4416/2N4416A/SST4416
Vishay Siliconix
HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED)
Limits
100 MHz 400 MHz
Parameter Symbol Test Conditions Min Max Min Max Unit
Common Source Input Conductanced giss 100 1,000
Common Source Input Susceptanced biss 2,500 10,000
Common Source Output Conductanced goss VDS = 15 V, VGS = 0 V 75 100 m
mS
Common Source Output Susceptanced boss 1,000 4,000
Common Source Forward Transconductanced gfs 4,000
Common-Source Power Gaind Gps VDS = 15 V, ID = 5 mA 18 10
dB
Noise Figured NF RG = 1 kW 2 4
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
20 10 500 100
rDS @ ID = 300 mA, VGS = 0 V
rDS(on) - Drain-Source On-Resistance ( )
gos @ VDS = 10 V, VGS = 0 V
gfs - Forward Transconductance (mS)
IDSS - Saturation Drain Current (mA)
IDSS 8 f = 1 kHz 80
16 400
gos - Output conductance (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo