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2n6661_vn88afd


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                                                                                                                                     2N6661/VN88AFD
                                                                                                                                           Vishay Siliconix

                                 N-Channel 80-V and 90-V (D-S) MOSFETS


 PRODUCT SUMMARY
 Part Number           V(BR)DSS Min (V)          rDS(on) Max (W)              VGS(th) (V)                ID (A)
      2N6661                     90                4 @ VGS = 10 V               0.8 to 2                  0.9
     VN88AFD                     80                4 @ VGS = 10 V              0.8 to 2.5                 1.29




 FEATURES                                            BENEFITS                                             APPLICATIONS
 D   Low On-Resistance: 3.6 W                        D      Low Offset Voltage                            D Direct Logic-Level Interface: TTL/CMOS
 D   Low Threshold: 1.6 V                            D      Low-Voltage Operation                         D Drivers: Relays, Solenoids, Lamps,
 D   Low Input Capacitance: 35 pF                    D      Easily Driven Without Buffer                    Hammers, Displays, Memories, Transistors,
 D   Fast Switching Speed: 6 ns                      D      High-Speed Circuits                             etc.
 D   Low Input and Output Leakage                    D      Low Error Voltage                             D Battery Operated Systems
                                                                                                          D Solid-State Relays



           TO-205AD                                                                   TO-220SD                                  D
            (TO-39)                                                                  (Tab-Drain)



 S                                         Device Marking                                                                                          Device Marking
                                             Side View                                                                                               Front View
       1
                                               2N6661                                                            G                                    VN88AFD
                                              "S" fllxxyy                                                                                             "S" xxyy

                                         "S" = Siliconix Logo                                                                                    "S" = Siliconix Logo
       2              3                  f = Factory Code                                                                                        xxyy = Date Code
G                            D           ll = Lot Traceability
                                         xxyy = Date Code                                   S G D                               S
           Top View                                                                    Front View
                                                                                                                     N-Channel MOSFET
            2N6661                                                                     VN88AFD




 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
                                  Parameter                                                  Symbol                    2N6661               VN88AFD                     Unit
 Drain-Source Voltage                                                                          VDS                        90                        80
                                                                                                                                                                         V
 Gate-Source Voltage                                                                           VGS                       "20                       "30
                                                                 TC = 25_C                                               0.9                       1.29
                                   _
 Continuous Drain Current (TJ = 150_C)                                                          ID
                                                                 TC = 100_C                                              0.7                       0.81                  A
 Pulsed Drain Currenta                                                                          IDM                      "3                        "3
                                                                 TC = 25_C                                               6.25                       15
 Power Dissipation                                                                              PD                                                                       W
                                                                 TC = 100_C                                              2.5                        6
 Thermal Resistance, Junction-to-Ambientb                                                      RthJA                     170
                                                                                                                                                                        _C/W
                                                                                                                                                                        _
 Thermal Resistance, Junction-to-Case                                                          RthJC                                               8.3
 Operating Junction and Storage Temperature Range                                             TJ, Tstg                              



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