Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various ME3424 - N-Channel 30-V (D-S) MOSFET

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                                                                                                               ME3424
    N-Channel 30-V (D-S) MOSFET
                                                                              FEATURES
    GENERAL DESCRIPTION                                                        RDS(ON)28m @VGS=10V
    The ME3424 is the N-Channel logic enhancement mode power field             RDS(ON)42m @VGS=4.5V
    effect transistors are produced using high cell density , DMOS trench      Super high density cell design for extremely low RDS(ON)
    technology. This high density process is especially tailored to            Exceptional on-resistance and maximum DC current
    minimize on-state resistance. These devices are particularly suited          capability
    for low voltage application such as cellular phone and notebook
                                                                              APPLICATIONS
    computer power management and other battery powered circuits               Power Management in Note book
    where high-side switching , and low in-line power loss are needed in       Portable Equipment
                                                                               Load Switch
    a very small outline surface mount package.




    PIN CONFIGURATION
                                      (TSOP-6)
                                       Top View




    Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)

                           Parameter                                Symbol          10sec             SteadyState           Unit
      Drain-Source Voltage                                            VDSS                          30                       V
      Gate-Source Voltage                                             VGSS                          

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