Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various RAM TBS6416B4E

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TBS6416B4E


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M.tec                                                                                                   TBS6416B4E

1M x 16Bit x 4 Banks synchronous DRAM



GENERAL DESCRIPTION
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

fabricated with M'tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of

system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and

programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system

applications.



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