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Vishay Siliconix
JFET Voltage-Controlled Resistors
PRODUCT SUMMARY
Part Number VGS(off) Max (V) V(BR)GSS Min (V) rDS(on) Max (W)
VCR2N -7 -25 60
VCR4N -7 -25 600
VCR7N -5 -25 8000
FEATURES BENEFITS APPLICATIONS
D Continuous Voltage-Controlled D Gain Ranging Capability/Wide Range D Variable Gain Amplifiers
Resistance Signal Attenuation D Voltage Controlled Oscillator
D High Off-Isolation D No Circuit Interaction D AGC
D High Input Impedance D Simplified Drive
DESCRIPTION
The VCR2N/4N/7N JFET voltage controlled resistors have an Key to device performance is the predictable rDS change
ac drain-source resistance that is controlled by a dc bias versus VGS bias where:
voltage (VGS) applied to their high impedance gate terminal.
Minimum rDS occurs when VGS = 0 V. As VGS approaches the r DS(@ V GS + 0)
pinch-off voltage, rDS rapidly increases. This series of junction
V GS
FETs is intended for applications where the drain-source r DSbias [
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