Service Manuals, User Guides, Schematic Diagrams or docs for : Agilent 5600LS AFM Enhanced Sample Versatility_ 300mm Wafer Vacuum Chuck 5991-2014EN c20140825 [2]

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5600LS AFM Enhanced Sample Versatility_ 300mm Wafer Vacuum Chuck 5991-2014EN c20140825 [2]


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Keysight 5600LS AFM
Enhanced Sample Versatility:
300mm Wafer Vacuum Chuck


                       The Keysight Technologies, Inc. 5600LS AFM, already one of the most versatile atomic
                       force microscopy systems on the market (with a fully programmable 200 mm stage that
                       allows complete access over a full 200 mm in X/Y travel), has added yet another highly
                       useful configuration.

                       Previously, in order to image a 300 mm wafer on an AFM, an engineer needed to "break"
                       the wafer and place the portion of interest on the stage. Such destructive testing is not
                       only costly, but prevents further processing of the device in question, thus limiting the
                       use of atomic force microscopy for process development. However, by utilizing the new
                       300 mm wafer vacuum chuck with a properly configured Keysight 5600LS AFM system,
                       process engineers and failure analysis engineers can quickly obtain data via any of
                       Keysight's AFM modes to provide valuable process information and feedback without
                       wafer breakage.

                       Available as a special configuration, this new 5600LS AFM option entails shifting and
                       rotating the X/Y stage, mounting the 300 mm wafer vacuum chuck, and enabling an
                       option within the Keysight PicoView control software that facilitates rotation of the
                       camera image so as to simplify navigation and data acquisition.

                       Contact your sales representative today for more
                       information or to receive a quotation for this new option.




             A                                  B
                                                                  C

                 P+ Buried Layer
                 Active Area of Devices
                                              SMM capacitance and dC/dV images of IC obtained simultaneously.
                                              Capacitance (A) clearly reveals differences in the varied shallow doping
                 N+ Buried Layer
                                              with construct devices within the active areas. There are dramatic
                                              contrast differences in the dC/dV phase image (B) which confirms the
                                              presence of sub-surface highly doped layers. A vertical line profile across
                 P+ Buried Layer              the phase image [as indicated by the green line] in (B) is shown in (C).
         D
02 | Keysight | Keysight 5600LS AFM



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