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Keysight Technologies
Three dimensional infinite-element
simulations of a scanning microwave
microscope cantilever for imaging
at the nanoscale


                                 Article Reprint




This article first appeared in                     www.keysight.com
the December 2013 issue of                         www.keysight.com/find/ict
Applied Physics Letters.
                                                   www.keysight.com/find/contactus
Reprinted with kind permission from
                                                   This information is subject to change without notice.
AIP Publishing
                                                   Published in USA, August 3, 2014
                                                   5991-3789EN
               Three-dimensional finite-element simulations of a scanning microwave microscope
               cantilever for imaging at the nanoscale
               A. O. Oladipo, M. Kasper, S. Lavdas, G. Gramse, F. Kienberger, and N. C. Panoiu


               Citation: Applied Physics Letters 103, 213106 (2013); doi: 10.1063/1.4832456
               View online: http://dx.doi.org/10.1063/1.4832456
               View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/103/21?ver=pdfcov
               Published by the AIP Publishing




This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 57.80.144.6
                                                                       On: Tue, 10 Dec 2013 23:06:47
                                                            APPLIED PHYSICS LETTERS 103, 213106 (2013)


             Three-dimensional nite-element simulations of a scanning microwave
             microscope cantilever for imaging at the nanoscale
                                          1,2, a)                3                2                    3                    4                      2,5
                        A. O. Oladipo,              M. Kasper,       S. Lavdas,       G. Gramse,           F. Kienberger,       and N. C. Panoiu
                        1
                         Bio-Nano Consulting, 338 Euston Road, London NW1 3BT, United Kingdom
                        2
                         Electronic and Electrical Engineering Department, University College London, Torrington Place,
                        London WC1E 7JE, United Kingdom
                        3
                         Biophysics Institute, Johannes Kepler University Linz, Gruberstrasse 40, 4020 Linz, Austria
                        4
                         Agilent Technologies Austria GmbH, Gruberstrasse 40, 4020 Linz, Austria
                        5
                         Thomas Young Centre, London Centre for Nanotechnology, University College London, 17-19 Gordon Street,
                        London WC1H 0AH, United Kingdom
                        (Received 15 September 2013; accepted 3 November 2013; published online 19 November 2013)
                        We use three-dimensional finite-element numerical simulations to fully characterize the
                        electromagnetic interactions between a metallic nano-tip and cantilever that are part of a scanning
                        microwave microscopy (SMM) system and dielectric samples. In particular, we use this rigorous
                        computational technique to analyze and validate a recently developed SMM calibration procedure
                        for complex impedance measurements in reflection mode. Our simulations show that relatively
                        small changes in the conductivity of the substrates can cause significant variations in the measured
                        reflection coefficient. In addition, we demonstrate that the bulk systemic impedance is extremely
                        sensitive to modifications of system parameters, namely, variations in the cantilever inclination
                        angle as small as 1 cause changes in system impedance that can be larger than 10%. Finally, the
                        main experimental implications of these results to SMM imaging and calibration are identified and
                        discussed. V 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4832456]
                                    C




                  The ability to observe and/or control nanoscale physical                      as a scattering reflection signal, S11. While SMM is com-
             phenomena can be viewed as the backbone of most of the                             monly used in semiconductor industry for dopant profiling
             nanotechnology research conducted nowadays by scientist                            applications and in materials science for calibrated capaci-
             and engineers. The array of applications of nanotechnology                         tance measurements, there are several limitations that cur-
             continues to expand rapidly, with beneficiaries in                                 rently are not fully addressed. For instance, the effect of
             electronics,1

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