Service Manuals, User Guides, Schematic Diagrams or docs for : Keithley SCS 4200 4200_SCS_HCI_DS
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4200-SCS Hot Carrier System
Testing hot carrier degradation of MOS transistors at the wafer level provides
quicker feedback and is more cost-effective than testing packaged test struc-
tures. It eliminates all packaging costs and delays. Keithley's Model 4200-SCS
Hot Carrier System allows accurate hot carrier degradation testing as soon as
wafers are produced. It combines fast, low noise measurement instrumenta-
tion with the analysis tools needed to produce lifetime projections quickly and
easily. When the Hot Carrier System is paired with an appropriate prober, the
same voltage stress conditions and test temperatures (typically room tempera-
ture or cold) can be used as when testing packaged transistors.
Lab grade DC device characterization
High Measurement Accuracy
Keithley's Hot Carrier System is based on the powerful Model 4200
Semiconductor Characterization System, which combines high speed and
accuracy with low measurement noise. The Model 4200-SCS's current mea-
surement noise is typically less than 0.001% of the measurement range and its
one-year accuracy specification is less than 0.02% drift. In contrast, competi-
tive solutions often have as much as 1% drift because they employ lower-cost,
lower-accuracy sourcing and measurement architectures. The Model 4200-
SCS's high quality instrumentation makes it possible to measure very small
percentages of DUT degradation with high accuracy. In many cases, the sys-
tem's low measurement noise and high accuracy makes possible accurate life-
time projections with as little as 1% degradation in the transistor performance.
For more information on the Model 4200-SCS, download the full instrument
specification from Keithley's web site.
Rapidly Detect Process Variation
The results of wafer level hot carrier tests can be rapidly correlated to process
changes in the gate oxide, LDD length, or other transistor parameters that
influence hot carrier lifetime.
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