Service Manuals, User Guides, Schematic Diagrams or docs for : Keithley SCS S530 S530 FlashMemPulseAppNote

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                                           Number 3177


Application Note                           Programming and Erasing Flash Memory
           Series                          Devices Using the Keithley S530 Pulse
                                           Generator Option
Introduction and Background                                           storage density and is by far the most dominant of the two types,
                                                                      so this note will focus on NAND flash memory.
Normally, in parametric test, the instrument used most is the
Source Measurement Unit (SMU). The SMU allows supplying                   In addition to the floating gate, NAND flash memory cells
a DC voltage or current to the device under test (DUT) and            (Figure 1) usually have a control gate, drain, source, and bulk.
simultaneously measuring the resultant voltage or current.            The memory cell is set (programmed) and reset (erased) by
However, there are some cases where it's necessary to apply a         applying or removing charge from the floating gate. Charge can
voltage to the device in a time-controlled manner. Often, the         be applied or removed from the floating gate of any type of flash
duration of these applied voltages must be on the order of a few      memory cell via Fowler-Nordheim (FN) current tunneling or via
microseconds in order to prevent the DUT from over-heating or         Hot Carrier Injection (HCI). In a normal CMOS transistor, both
being over-stressed. SMUs are not designed to output voltages         of these mechanisms cause device degradation and are usually to
this quickly. Therefore, a different instrument is required: a        be avoided, but they are beneficial for flash memory. Moreover,
pulse generator.                                                      although FN tunneling and HCI are useful for programming and
                                                                      erasing flash memory, they are also why flash memory cells have
   A pulse generator allows outputting a voltage in a time-
                                                                      a limited lifetime.
controlled, time-accurate manner, including control over the
amount of voltage (pulse height), the duration of the pulse
(pulse width), as well as the voltage ramp rate (rise and fall
time). This type of instrument also provides the ability to control
the number of pulses that are output and even to synchronize                                     Polysilicon control gate
                                                                                   Sidewall                                  Sidewall
multiple pulses.                                                                                     ONO Dielectric
                                                                                                 Polysilicon floating gate
   The Keithley S530 Parametric Test System offers a pulse                                            Tunnel oxide
generator option that offers two to six channels of pulse outputs,           N+ Source                                         N+ Drain
each of which is capable of outputting a maximum of 

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