Service Manuals, User Guides, Schematic Diagrams or docs for : Keithley 2001 ds 2N4392_TG-128-1
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Siliconix 2N/PN/SST4391 Series
N Channel JFETs
2N4391 PN4391 SST4391
2N4392 PN4392 SST4392
2N4393 PN4393 SST4393
Product Summary
Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)
2N/PN/SST4391 -4 to -10 30 5 4
2N/PN/SST4392 -2 to -5 60 5 4
2N/PN/SST4393 -0.5 to -3 100 5 4
2N4391, For applications information see AN104, page 21.
PN/SST4393, For applications information see AN106, page 28.
Features Benefits Applications
D Low On Resistance: 4391<30 W D Low Error Voltage D Analog Switches
D Fast Switching tON: 4 ns D High Speed Analog Circuit Performance D Choppers
D High Off Isolation: ID(off) with Low Leakage D Negligible Off Error," Excellent Accuracy D Sample and Hold
D Low Capacitance: < 3.5 pF D Good Frequency Response, Low Glitches D Normally On" Switches
D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters
D Commutators
Description
The 2N/PN/SST4391 series features many of the can is available with processing per MIL S 19500 (see
superior characteristics of JFETs which make it a good Military Information). Both the PN, TO 226AA
choice for demanding analog switching applications and (TO 92), and SST, TO 236 (SOT 23), series are available
for specialized amplifier circuits. in tape and reel for automated assembly (see Packaging
Information). For similar dual products, see the
The 2N series hermetically sealed TO 206AA (TO 18) 2N5564/5565/5566 data sheet.
TO 206AA
(TO 18) TO 226AA
(TO 92)
TO 236
(SOT 23)
S 1
D
1
D 1
S 2 3 G
S 2
2 3 G 3
D G and Case
Top View Top View
Top View
2N4391 PN4391
SST4391 (CA)*
2N4392 PN4392
SST4392 (CB)*
2N4393 PN4393
SST4393 (CC)*
*Marking Code for TO 236
P-37410--Rev. D (07/04/94) 1
2N/PN/SST4391 Series Siliconix
Absolute Maximum Ratings
Gate Drain, Gate Source Voltage: (2N/PN Prefixes) . . . . . . . -40 V Operating Junction Temperature : (2N Prefix) . . . . . -55 to 200 _C
(SST Prefix) . . . . . . . . . . . -35 V (PN/SST Prefixes) -55 to 150 _C
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power Dissipation : (2N Prefix)a . . . . . . . . . (TC = 25_C) 1800 mW
(PN/SST Prefixes)b . . . . . . . . . . . . . . . 350 mW
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C
Notes
Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . -65 to 200 _C a. Derate 10 mW/_C above 25_C
(PN/SST Prefixes) . . . . . . . . . -55 to 150 _C b. Derate 2.8 mW/_C above 25_C
Specificationsa
Limits
4391 4392 4393
Parameter Symbol Test Conditions Typb Min Max Min Max Min Max Unit
Static
Gate Source IG = -1 mA 2N/PN -55 -40 -40 -40
Breakdown V l
Voltage V(BR)GSS
B kd VDS = 0 V SST -55 -35 -35 -35
V
Gate Source VDS = 20 V 2N/PN: ID = 1 nA
VGS(off) -4 -10 -2 -5 -0.5
-0 5 -3
Cutoff Voltage
C ff V l VDS = 15 V SST: ID = 10 nA
2N 50 150 25 75 5 30
Saturation D i
S i Drain Currentc
C IDSS VDS = 20 V, VGS = 0 V
V PN 50 150 25 100 5 60 mA
A
SST 50 25 5
2N/SST -5 -100 -100 -100
VGS = -20 V VDS = 0 V
V, pA
PN -5 -1000 -1000 -1000
G Reverse C
Gate R Current IGSS 2N: TA = 150_C -13 -200 -200 -200
PN: TA = 100_C -1 -200 -200 -200 nA
A
SST: TA = 125_C -3
Gate Operating Current IG VDG = 15 V, ID = 10 mA -5
2N: VGS = -5 V 5 100
pA
A
2N: VGS = -7 V 5 100
2N: VGS = -12 V 5 100
VDS = 20 V
PN: VGS = -5 V 0.005 1
PN: VGS = -7 V 0.005 1 nA
A
PN: VGS = -12 V 0.005 1
SST VDS = 10 V, VGS = -10 V 5 100 100 100 pA
Drain Cutoff C
D i C ff Current ID(off) 2N: VGS = -5 V 13 200
VDS = 20 V
2N: VGS = -7 V 13 200
TA = 150_C
150 C
2N: VGS = -12 V 13 200
PN: VGS = -5 V 1 200
nA
A
VDS = 20 V
PN: VGS = -7 V 1 200
TA = 100_C
100 C
PN: VGS = -12 V 1 200
VDS = 10 V
SST: VGS = -10 V 3
TA = 125_C
ID = 3 mA 0.25 0.4
D i S On Voltage
Drain Source O V l VDS(on) VGS = 0 V ID = 6 mA 0.3 0.4 V
ID = 12 mA 0.35 0.4
2 P-37410--Rev. D (07/04/94)
Siliconix 2N/PN/SST4391 Series
Specificationsa
Limits
4391 4392 4393
Parameter Symbol Test Conditions Typb Min Max Min Max Min Max Unit
Static (Cont'd)
Drain Source
rDS(on) VGS = 0 V, ID = 1 mA 30 60 100 W
On Resistance
Gate Source IG = 1 mA 2N 0.7 1 1 1
VGS(F) V
Forward V l
F d Voltage VDS = 0 V PN/SST 0.7
Dynamic
Common Source
gfs 6 mS
ForwardTransconductance
VDS = 20 V, ID = 1 mA f = 1 kHz
V mA,
Common Source
gos 25 mS
Output Conductance
Drain Source
rDS(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 30 60 100 W
On Resistance
2N 12 14 14 14
Common Source VDS = 20 V, VGS = 0 V
V
Ciss PN 12 16 16 16
Input Capacitance f = 1 MHz
SST 13
2N: VGS = -5 V 3.3 3.5
2N: VGS = -7 V 3.2 3.5
2N: VGS = -12 V 2.8 3.5
pF
F
PN: VGS = -5 V 3.5 5
Common S
C Source R
Reverse VDS = 0 V
Crss PN: VGS = -7 V 3.4 5
Transfer Capacitance f = 1 MHz
PN: VGS = -12 V 3.0 5
SST: VGS = -5 V 3.6
SST: VGS = -7 V 3.5
SST: VGS = -12 V 3.1
Equivalent Input VDS = 10 V, ID = 10 mA nV/
en 3
Noise Voltage f = 1 kHz Hz
Switching
2N/PN 2 15 15 15
td(on)
SST 2
Turn O Ti
T On Time
2N/PN 2 5 5 5
tr
VDD = 10 V SST 2
VGS(H) = 0 V ns
See Switching Circuit 2N/PN 6 20 35 50
td(off)
SST 6
Turn Off Ti
T Time
2N/PN 13 15 20 30
tf
SST 13
Notes
a. TA = 25_C unless otherwise noted. NCB
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW v300 ms duty cycle v3%.
P-37410--Rev. D (07/04/94) 3
2N/PN/SST4391 Series Siliconix
Typical Characteristics
On Resistance and Drain Current
vs. Gate Source Cutoff Voltage On Resistance vs. Drain Current
100 200 100
rDS(on) - Drain Source On Resistance ( W )
rDS(on) - Drain Source On Resistance ( W )
rDS @ ID = 1 mA, VGS = 0 V TA = 25_C
I DSS - Saturation Drain Current (mA)
IDSS @ VDS = 20 V, VGS = 0 V
80 160 80
IDSS VGS(off) = -2 V
60 rDS 120 60
40 80 40
-4 V
20 40 20 -8 V
0 0 0
0 -2 -4 -6 -8 -10 1 10 100
VGS(off) - Gate Source Cutoff Voltage (V) ID - Drain Current (mA)
On Resistance vs. Temperature Turn On Switching
200 5
ID = 1 mA tr approximately independent of ID
rDS(on) - Drain Source On Resistance ( W )
rDS changes X 0.7%/_C VDD = 5 V, RG = 50 W
160 4 VGS(L) = -10 V
Switching Time (ns)
120 3
VGS(off) = -2 V td(on) @
ID = 12 mA
80 2
-4 V
td(on) @
40 -8 V 1 ID = 3 mA
tr
0 0
-55 -35 -15 5 25 45 65 85 105 125 0 -2 -4 -6 -8 -10
TA - Temperature (_C) VGS(off) - Gate Source Cutoff Voltage (V)
Turn Off Switching Capacitance vs. Gate Source Voltage
30 30
td(off) independent of device VGS(off) f = 1 MHz
VDD = 5 V, VGS(L) = -10 V VDS = 0 V
24 24
Switching Time (ns)
Capacitance (pF)
18 VGS(off) = -2 V 18
tf
12 12
td(off)
Ciss
6 6
VGS(off) = -8 V Crss
0 0
0 2 4 6 8 10 0 -4 -8 -12 -16 -20
ID - Drain Current (mA) VGS - Gate Source Voltage (V)
4 P-37410--Rev. D (07/04/94)
Siliconix 2N/PN/SST4391 Series
Typical Characteristics (Cont'd)
Forward Transconductance and Output onductance
Noise Voltage vs. Frequency vs. Gate Source Cutoff Voltage*
100 50 500
gfs and gos @ VDS = 20 V
g fs - Forward Transconductance (mS)
VDS = 10 V
VGS = 0 V, f = 1 kHz
en - Noise Voltage (nV / Hz)
40 400
g os - Output Conductance (mS)
30 gfs gos 200
10
ID = 1 mA
20 200
ID = 10 mA 10 100
1 0 0
10 100 1k 10 k 100 k 0 -2 -4 -6 -8 -10
f - Frequency (Hz) VGS(off) - Gate Source Cutoff Voltage (V)
Gate Leakage Current Common Gate Input Admittance
10 nA 100
IGSS @ 125_C
VDG = 10 V
ID = 10 mA ID = 10 mA
TA = 125_C gig
1 nA TA = 25_C
I G - Gate Leakage
10
100 pA 1 mA
1 mA big
(mS)
10 pA 10 mA IGSS @ 25_C
TA = 25_C 1
1 pA
IG(on) @ ID
0.1 pA 0.1
0 6 12 18 24 30 100 200 500 1000
VDG - Drain Gate Voltage (V) f - Frequency (MHz)
Common Gate Forward Admittance Common Gate Reverse Admittance
100 10
VDG = 10 V VDG = 10 V
ID = 10 mA ID = 10 mA
TA = 25_C TA = 25_C
-gfg bfg
1.0 -brg
10
gfg
(mS)
(mS)
-grg
+grg
1 0.1
0.1 0.01
100 200 500 1000 100 200 500 1000
f - Frequency (MHz) f - Frequency (MHz)
P-37410--Rev. D (07/04/94) 5
2N/PN/SST4391 Series Siliconix
Typical Characteristics (Cont'd)
Common Gate Output Admittance Transconductance vs. Drain Current
100 100
VDG = 10 V VGS(off) = -2 V VDS = 10 V
g fs - Forward Transconductance (mS)
ID = 10 mA f = 1 kHz
TA = 25_C
bog
10 TA = -55_C
25_C
gog
(mS)
10
1 125_C
0.1 1
100 200 500 1000 0.1 1.0 10
f - Frequency (MHz) ID - Drain Current (mA)
Output Characteristics Transfer Characteristics
100 100
VGS(off) = -4 V VGS(off) = -4 V VDS = 20 V
80 80
I D - Drain Current (mA)
I D - Drain Current (mA)
TA = -55_C
60 VGS = 0 V 60
25_C
-0.5 V
40 -1.0 V 40
-1.5 V
20 -2.0 V 20
125_C
-2.5 V
0 0
0 2 4 6 8 10 0 -1 -2 -3 -4 -5
VDS - Drain Source Voltage (V) VGS - Gate Source Voltage (V)
Switching Time Test Circuit
VDD
4391 4392 4393
VGS(L) -12 V -7 V -5 V
RL
RL* 800 W 1600 W 3000 W
ID(on) 12 mA 6 mA 3 mA
OU
*Non inductive VGS(H)
Input Pulse Sampling Scope VGS(L)
Rise Time < 1 ns Rise Time 0.4 ns
Fall Time < 1 ns Input Resistance 10 MW
1 kW 51 W
Pulse Width 100 ns Input Capacitance 1.5 pF
PRF 1 MHz
See Typical Characteristics curves for changes. VIN
Scope 51 W
6 P-37410--Rev. D (07/04/94)
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