Service Manuals, User Guides, Schematic Diagrams or docs for : Keithley 2001 ds TN2504

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Supertex inc.                                                                                                                                    TN2504

                                                    N-Channel Enhancement-Mode
                                                    Vertical DMOS FET

Features                                                                                     General Description
        Low threshold (1.6V max.)                                                            This low threshold, enhancement-mode (normally-off)
        High input impedance                                                                 transistor utilizes a vertical DMOS structure and Supertex's
        Low input capacitance (125pF max.)                                                   well-proven, silicon-gate manufacturing process. This
        Fast switching speeds                                                                combination produces a device with the power handling
        Low on-resistance                                                                    capabilities of bipolar transistors and with the high input
        Free from secondary breakdown                                                        impedance and positive temperature coefficient inherent
        Low input and output leakage                                                         in MOS devices. Characteristic of all MOS structures, this
                                                                                             device is free from thermal runaway and thermally-induced
Applications                                                                                 secondary breakdown.
        Logic level interfaces 

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