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                                                                                          CEM2939
Dual Enhancement Mode Field Effect Transistor (N and P Channel)


FEATURES
                                                                                                                              5
  20V, 6.5A, RDS(ON) = 30m @VGS = 4.5V.
             RDS(ON) = 43m @VGS = 2.5V.
  -20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V.
               RDS(ON) = 90m @VGS = -2.5V.
  Super high dense cell design for extremely low RDS(ON).
                                                                                     D1     D1       D2     D2
  High power and current handing capability.                                         8          7     6     5

  Lead free product is acquired.
  Surface mount Package.



                                             SO-8
                                                                                     1          2     3     4
                                                            1                        S1         G1    S2    G2




ABSOLUTE MAXIMUM RATINGS                              TA = 25 C unless otherwise noted
                     Parameter                              Symbol        N-Channel             P-Channel        Units
  Drain-Source Voltage                                           VDS          20                     -20          V
  Gate-Source Voltage                                            VGS          

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