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                                                                                   CEM8958A
Dual Enhancement Mode Field Effect Transistor (N and P Channel)                                                 PRELIMINARY



FEATURES
                                                                                                                              5
  30V, 6.8A, RDS(ON) = 28m @VGS = 10V.
             RDS(ON) = 42m @VGS = 4.5V.
  -30V, -4.8A, RDS(ON) = 58m @VGS = -10V.
               RDS(ON) = 85m @VGS = -4.5V.
  Super high dense cell design for extremely low RDS(ON).                          D1    D1     D2         D2
                                                                                   8      7      6         5
  High power and current handing capability.

  Lead free product is acquired.

  Surface mount Package.


                                            SO-8                                   1      2      3         4
                                                            1                      S1    G1     S2         G2




ABSOLUTE MAXIMUM RATINGS                             TA = 25 C unless otherwise noted
                     Parameter                              Symbol        N-Channel            P-Channel           Units
  Drain-Source Voltage                                           VDS         30                      -30            V
  Gate-Source Voltage                                            VGS         

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