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                                                   CEP04N65/CEB04N65
                                                            CEF04N65
 N-Channel Enhancement Mode Field Effect Transistor                                                               PRELIMINARY



 FEATURES
         Type        VDSS     RDS(ON)       ID     @VGS
   CEP04N65          650V      2.8         4A       10V
   CEB04N65          650V      2.8         4A       10V
   CEF04N65          650V      2.8         4A d     10V


   Super high dense cell design for extremely low RDS(ON).                                                 D

   High power and current handing capability.
   Lead-free plating ; RoHS compliant.



                D                                                                  G


                                 G                        G
     G                           D                            D
        S                         S                                                                        S
                                                                  S
    CEB SERIES                        CEP SERIES                      CEF SERIES
    TO-263(DD-PAK)                    TO-220                          TO-220F



 ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                     Limit
                      Parameter                            Symbol                                                     Units
                                                                            TO-220/263                TO-220F
   Drain-Source Voltage                                               VDS                      650                     V
   Gate-Source Voltage                                                VGS                     

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