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                                                CEP02N6A/CEB02N6A
                                                         CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
     Type            VDSS    RDS(ON)       ID       @VGS
  CEP02N6A           600V     8.5          1.4A     10V
  CEB02N6A           600V     8.5          1.4A     10V
  CEF02N6A           600V     8.5          1.4A d   10V


  Super high dense cell design for extremely low RDS(ON).                                                  D

  High power and current handing capability.
  Lead free product is acquired.



               D                                                                    G


                                G                          G
     G                          D                              D
        S                        S                                 S
    CEB SERIES                       CEP SERIES                        CEF SERIES                           S
    TO-263(DD-PAK)                   TO-220                            TO-220F



ABSOLUTE MAXIMUM RATINGS                              Tc = 25 C unless otherwise noted
                                                                                     Limit
                      Parameter                            Symbol                                                     Units
                                                                           TO-220/263                  TO-220F
  Drain-Source Voltage                                                 VDS                      600                     V
  Gate-Source Voltage                                                  VGS                      

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