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                                                     CEP03N8/CEB03N8
                                                             CEF03N8
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
        Type        VDSS     RDS(ON)        ID     @VGS
    CEP03N8         800V       4.8          3A     10V
    CEB03N8         800V       4.8          3A     10V
    CEF03N8         800V       4.8          3A d   10V


  Super high dense cell design for extremely low RDS(ON).                                                 D

   High power and current handing capability.
   Lead-free plating ; RoHS compliant.



               D                                                                   G


                               G                          G
    G                          D                              D
       S                        S                                                                          S
                                                                  S
   CEB SERIES                       CEP SERIES                        CEF SERIES
   TO-263(DD-PAK)                   TO-220                            TO-220F



ABSOLUTE MAXIMUM RATINGS                             Tc = 25 C unless otherwise noted
                                                                                    Limit
                      Parameter                           Symbol                                                     Units
                                                                          TO-220/263                  TO-220F
  Drain-Source Voltage                                                VDS                      800                     V
  Gate-Source Voltage                                                 VGS                     

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