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                                                            CEP740G/CEB740G
                                                                    CEF740G
N-Channel Enhancement Mode Field Effect Transistor                                                                  PRELIMINARY



FEATURES
      Type         VDSS        RDS(ON)      ID      @VGS
     CEP740G       400V        0.55         10A     10V
     CEB740G       400V        0.55         10A     10V
     CEF740G       400V        0.55         10A e   10V


                                                                                                            D
  Super high dense cell design for extremely low RDS(ON).

  High power and current handing capability.
  Lead free product is acquired.


                                                                                    G
             D


                          G                         G
 G                        D                             D
    S                      S                                S
                                                                                                            S
CEB SERIES                     CEP SERIES                       CEF SERIES
TO-263(DD-PAK)                 TO-220                           TO-220F


ABSOLUTE MAXIMUM RATINGS                                    Tc = 25 C unless otherwise noted
                                                                                           Limit
                     Parameter                                   Symbol                                                Units
                                                                                TO-220/263             TO-220F
  Drain-Source Voltage                                                  VDS                     400                      V
  Gate-Source Voltage                                                   VGS                    

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