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N-Channel Enhancement Mode Field Effect Transistor
FEATURES
720V, 1.6A, RDS(ON) = 6.75 @VGS = 10V.
750V@Tc=150 C
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
D G
G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK) S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
720 (Tc=25 C) V
Drain-Source Voltage VDS
750 (Tc=150 C) V
Gate-Source Voltage VGS
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