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                 Guilin Strong Micro-Electronics Co.,Ltd.
BSS84

SOT-23 (SOT-23 Field Effect Transistors)




P-Channel Enhancement-Mode MOS FETs

P  MOS 

MAXIMUM        RATINGS 

Characteristic                     Symbol              Max             Unit 

Drain-Source Voltage
                                    BVDSS               -50               V
-
Gate- Source Voltage
                                     VGS                +20               V
-
Drain Current (continuous)
                                     IDR                -130             mA
-
Drain Current (pulsed)
                                     IDRM               -520             mA
-

THERMAL CHARACTERISTICS 

                                             Symbol       Max            Unit
Characteristic 
                                                                         
Total Device Dissipation                      PD               200       mW
TA=25 25
Derate above25  25                                             1.8      mW/

Thermal Resistance Junction to Ambient        RJA              350       /W

Junction and Storage Temperature
                                             TJ,Tstg            150,-55to+150

                  
                  Guilin Strong Micro-Electronics Co.,Ltd.
BSS84
DEVICE           MARKING 
BSS84=SP
BSS84=
ELECTRICAL CHARACTERISTICS 

(TA=25 unless otherwise noted  25)

Characteristic                             Symbol    Min    Typ   Max    Unit
                                                                         

Drain-Source Breakdown Voltage
                                           BVDSS     -50     --    --     V
-(ID =-250uA ,VGS=0V)
Gate Threshold Voltage
                                           VGS(th)   -1.0    --   -2.5    V
(ID =-250uA ,VGS= VDS)

Diode Forward Voltage Drop
                                            VSD       --     --   -1.5    V
(ISD=-200mA ,VGS=0V)

Zero Gate Voltage Drain Current
(VGS=0V, VDS= -50V)                         IDSS      --     --   -15    uA
(VGS=0V, VDS=-50V, TA=125)                                        -60

Gate Body Leakage
                                            IGSS      --     --   +10    nA
(VGS=+20V, VDS=0V)

Static Drain-Source On-State Resistance
                                           RDS(ON)    --     --    10     
(ID=-100mA ,VGS=-5V)
Input Capacitance 
                                            CISS      --     73    --    pF
(VGS=0V, VDS=-25V,f=1MHz)
Common Source Output Capacitance
                                            COSS      --     10    --    pF
(VGS=0V, VDS=-25V,f=1MHz)
Turn-ON Time 
                                            t(on)     --     --    5      ns
(VDS=-30V, ID=-270mA, RGEN=6)
Turn-OFF Time 
                                            t(off)    --     --    20     ns
(VDS=-30V, ID=-270mA, RGEN=6)
Reverse Recovery Time 
                                             trr      --     10    --     ns
(ISD=-100mA, VGS=0V)
1. FR-5=1.0

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