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Guilin Strong Micro-Electronics Co.,Ltd.
GM5551
MAXIMUM RATINGS
RATINGS
Characteristic Symbol Rating Unit
Collector Emitter Voltage
VCEO 160 Vdc
-
Collector Base Voltage
VCBO 180 Vdc
-
Emitter Base Voltage
VEBO 5.0 Vdc
-
Collector Current--Continuous
Ic 600 mAdc
-
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
225 mW
FR-5 Board(1)
PD
TA=25 25
1.8 mW/
Derate above25 25
Thermal Resistance Junction to Ambient
RJA 556 /W
Total Device Dissipation 300 mW
Alumina Substrate ,(2)TA=25 PD
Derate above25 25 2.4 mW/
Thermal Resistance Junction to Ambient
RJA 417 /W
Junction and Storage Temperature
TJ,Tstg 150, -55to+150
DEVICE MARKING
GM5551=G1
Guilin Strong Micro-Electronics Co.,Ltd.
GM5551
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted 25)
Characteristic Symbol Min Max Unit
Collector Emitter Breakdown Voltage(3)
V(BR)CEO 160 -- Vdc
-(Ic=1.0mAdc,IB=0)
Collector Base Breakdown Voltage
V(BR)CBO 180 -- Vdc
-(Ic=100Adc,IE=0)
Emitter-Base Breakdown Voltage
V(BR)EBO 5.0 -- Vdc
-(IE=10Adc,Ic=0)
Emitter Cutoff Current
(VEB=4.0Vdc,Ic=0) IEBO -- 50 nAdc
Collector Cutoff Current
ICBO -- 50 nAdc
(VCB=120Vdc,IE=0)
DC Current Gain HFE --
(Ic=1.0mAdc,VCE=5.0Vdc) 80 --
(Ic=10mAdc,VCE=5.0Vdc) 80 250
(Ic=50mAdc,VCE=5.0Vdc) 30 --
Collector-Emitter Saturation Voltage
-
(Ic=10mAdc, IB=1.0mAdc) VCE(sat) 0.15 Vdc
--
(Ic=50mAdc, IB=5.0mAdc) -- 0.2
Base-Emitter Saturation Voltage
-
VBE(sat) -- 1.0 Vdc
(Ic=10mAdc, IB=1.0mAdc)
(Ic=50mAdc, IB=5.0mAdc) -- 1.0
Current-Gain-Bandwidth Product -
fT 100 300 MHz
(Ic=-10mAdc,VCE=-10Vdc,f=100MHz)
Output Capacitance
(VCB=-10.0Vdc, IE=0, f=1.0MHz) Cobo -- 6.0 pF
Small-Signal Current Gain
hfe 40 200 --
(VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz)
Noise Figure
NF -- 8.0 dB
(VCE=-5.0Vdc, IC=-200Adc,Rs=1.0kf=1.0KHz)
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