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                  Guilin Strong Micro-Electronics Co.,Ltd.
MMBTH10




MAXIMUM          RATINGS 
Characteristic                           Symbol             Rating              Unit
                                                                                
Collector-Emitter Voltage
                                          VCEO                25                 Vdc

Collector-Base Voltage
                                          VCBO                30                 Vdc

Emitter-Base Voltage
                                          VEBO               3.0                 Vdc

Collector Current-Continuous
                                           Ic                 50                mAdc
-

THERMAL CHARACTERISTICS 

Characteristic                                    Symbol       Max
                                                                                Unit 
                                                               
Total Device Dissipation                            PD
                                                                   225               mW
 FR-5 Board(1)
TA=25 25
                                                                   1.8          mW/
Derate above25  25
Thermal Resistance Junction to Ambient
                                                   RJA             556           /W


Junction and Storage Temperature
                                                  TJ,Tstg                -55to+150




DEVICE           MARKING 

MMBTH10=3EM
                 
                 Guilin Strong Micro-Electronics Co.,Ltd.
MMBTH10


ELECTRICAL CHARACTERISTICS 

(TA=25 unless otherwise noted  25)
   =25                           )


Characteristic                        Symbol     Min   Typ   Max   Unit
                                                                   

Emitter Cutoff Current
                                       IEBO       --    --   100   nA
(VEB=2.0v,IC=0)

Collector Cutoff Current
                                       ICBO       --    --   100   nA
(VCB=25v,IE=0)

Collector-Base Breakdown Voltage
                                      V(BR)CBO    30    --    --    V
(Ic=100uA)

Collector-Emitter Breakdown Voltage
                                      V(BR)CEO    25    --    --    V
(Ic=1mA)

Emitter-Base Breakdown Voltage
                                      V(BR)EBO    3     --    --    V
(IE=10uA)

Collector Saturation Voltage
                                      VCE(sat)    --    --   0.5   Vdc
(Ic=4mAdc,IB=0.4mA)

DC Current Gain 
                                           HFE    60    --    --
(VCE=10v,IC=4mA)

Gain Bandwidth Product
                                           fT    650    --    --   MHz
(VCE=10v,IC=4mA)

Output Capacitance 
                                           Cob    --    --   0.7   pF
(VCB=10v,IE=0,f=1.0MHz)


1. FR-5=1.0

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