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Guilin Strong Micro-Electronics Co.,Ltd.
GM9018
MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Emitter Voltage
VCEO 20 Vdc
Collector-Base Voltage
VCBO 30 Vdc
Emitter-Base Voltage
VEBO 5.0 Vdc
Collector Current-Continuous
Ic 50 mAdc
-
THERMAL CHARACTERISTICS
Characteristic Symbol Max
Unit
Total Device Dissipation PD
225 mW
FR-5 Board(1)
TA=25 25
1.8 mW/
Derate above25 25
Total Device Dissipation PD 300 mW
Alumina Substrate ,(2)TA=25
Derate above25 25 2.4 mW/
Thermal Resistance Junction to Ambient
RJA 417 /W
Junction and Storage Temperature
TJ,Tstg -55to+150
DEVICE MARKING
GM9018=J8
HFE:40-72; 72-97; 97-146; 146-200
Guilin Strong Micro-Electronics Co.,Ltd.
GM9018
ELECTRICAL CHARACTERISTICS
=25 unless otherwise noted 25)
(TA=25 )
Characteristic Symbol Min Typ Max Unit
Emitter Cutoff Current
IEBO -- -- 0.5 A
(VEB=3.0v,IC=0)
Collector Cutoff Current
(VCB=20v,IE=0) ICBO -- -- 0.5 A
Collector-Base Breakdown Voltage
V(BR)CBO 30 -- -- V
(Ic=100uA)
Collector-Emitter Breakdown Voltage
V(BR)CEO 20 -- -- V
(Ic=1mA)
Emitter-Base Breakdown Voltage
V(BR)EBO 4 -- -- V
(IE=100uA)
Collector Saturation Voltage
VCE(sat) -- -- 0.6 Vdc
(Ic=10mAdc,IB=1mA)
DC Current Gain
HFE 40 -- 200
(VCE=5.0v,IC=1.0mA)
Gain Bandwidth Product
fT 600 800 1100 MHz
(VCE=5.0v,IC=10mA)
Noise Figure
NF -- -- 1.0 dB
(V CE=6V,Ic=0.1mA,f=1kHz,Rg=10k)
Output Capacitance
Cob -- 1.2 1.5 pF
(VCB=10v,IE=0,f=1.0MHz)
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