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                                                                                                                                                  BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor
                                                                                                                            March 2010


     BS170 / MMBF170
     N-Channel Enhancement Mode Field Effect Transistor
       General Description                                                  Features
     These N-Channel enhancement mode field effect                              High density cell design for low RDS(ON).
     transistors are produced using Fairchild's proprietary, high
     cell density, DMOS technology. These products have been                    Voltage controlled small signal switch.
     designed to minimize on-state resistance while provide
                                                                                Rugged and reliable.
     rugged, reliable, and fast switching performance. They can
     be used in most applications requiring up to 500mA DC.                     High saturation current capability.
     These products are particularly suited for low voltage, low
     current applications such as small servo motor control,
     power MOSFET gate drivers, and other switching
     applications.



                           BS170                                MMBF170

                                                                 D



                                                                                    S

              D                  TO-92                                          SOT-23
                  G                                                         G
                      S




     Absolute Maximum Ratings                           TA = 25

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