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                                                                                                                                                        FDT439N
                                                                                                                                June 1999




   FDT439N
   N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

    General Description                                                        Features
    This N-Channel Enhancement mode field effect transistor                        6.3 A, 30 V. RDS(on) = 0.045  @ VGS = 4.5 V
    is produced using Fairchild Semiconductor's proprietary,
    high cell density, DMOS technology. This very high                                               RDS(on) = 0.058  @ VGS = 2.5 V
    density process is especially tailored to minimize on-
    state resistance, and provide superior switching                               Fast switching speed.
    performance. These products are well suited to low
    voltage, low current applications such as notebook                             High power and current handling capabitlity in a
    computer power management, battery powered                                     widely used surface mount package.
    circuits, and DC motor control.

    Applications
        DC/DC converter
        Load switch
        Motor driving



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       SOT-223                                                                          (J23Z)




     Absolute Maximum Ratings                               TA = 25

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