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                                                                                                                                     August 1998



     FDT457N
     N-Channel Enhancement Mode Field Effect Transistor
     General Description                                                              Features

     These N-Channel enhancement mode power field effect                                   5 A, 30 V. RDS(ON) = 0.06  @ VGS = 10 V
     transistors are produced using Fairchild's proprietary, high
                                                                                                      RDS(ON) = 0.090  @ VGS = 4.5 V.
     cell density, DMOS technology. This very high density
     process is especially tailored to minimize on-state resistance,                       High density cell design for extremely low RDS(ON).
     provide superior switching performance. These products are
     well suited to low voltage, low current applications such as                          High power and current handling capability in a widely used
     notebook computer power management, battery powered                                   surface mount package.
     circuits, and DC motor control.




      SuperSOTTM-3                 SuperSOTTM-6             SuperSOTTM-8                   SO-8                SOT-223                 SOIC-16




                                                                D
     D                                                                                D                                                D




                                             S                                                                      S
                                      D
                            G                         G         D           S
                                                                                 SOT-223*             G                       G                  S
  SOT-223
                                                                                          (J23Z)




  Absolute Maximum Ratings                         TA = 25oC unless otherwise noted
Symbol          Parameter                                                                                 FDT457N                                Units
VDSS            Drain-Source Voltage                                                                          30                                     V
VGSS            Gate-Source Voltage - Continuous                                                             

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