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                                                                                                                             August 1997




 FDV304P
 Digital FET, P-Channel
 General Description                                                               Features

 This P-Channel enhancement mode field effect transistors is                         -25 V, -0.46 A continuous, -1.5 A Peak.
 produced using Fairchild's proprietary, high cell density, DMOS                               RDS(ON) = 1.1  @ VGS = -4.5 V
 technology. This very high density process is tailored to minimize                            RDS(ON) = 1.5  @ VGS= -2.7 V.
 on-state resistance at low gate drive conditions. This device is
 designed especially for application in battery power applications                   Very low level gate drive requirements allowing direct
 such as notebook computers and cellular phones. This device                         operation in 3V circuits. VGS(th) < 1.5V.
 has excellent on-state resistance even at gate drive voltages as
 low as 2.5 volts.                                                                   Gate-Source Zener for ESD ruggedness.
                                                                                     >6kV Human Body Model
                                                                                     Compact industry standard SOT-23 surface mount
                                                                                     package.




          SOT-23                    SuperSOTTM-6            SuperSOTTM-8              SO-8                     SOT-223          SOIC-16

        Mark:304




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                                                                                                  G                      S




 Absolute Maximum Ratings                      TA = 25oC unless other wise noted
Symbol         Parameter                                                                              FDV304P                             Units
VDSS           Drain-Source Voltage                                                                      -25                               V
VGSS           Gate-Source Voltage                                                                       -8                                V
ID             Drain Current                 - Continuous                                               -0.46                              A
                                             - Pulsed                                                    -1.5
PD             Maximum Power Dissipation                                                                0.35                               W
TJ,TSTG        Operating and Storage Temperature Range                                                -55 to 150                           

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