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                                                                                                                                September 2001




   FDC6301N
   Dual N-Channel , Digital FET
  General Description                                                                  Features

  These dual N-Channel logic level enhancement mode field                                 25 V, 0.22 A continuous, 0.5 A Peak.
  effect transistors are produced using Fairchild 's proprietary,                                    RDS(ON) = 5  @ VGS= 2.7 V
  high cell density, DMOS technology. This very high density                                         RDS(ON) = 4  @ VGS= 4.5 V.
  process is especially tailored to minimize on-state resistance.
  This device has been designed especially for low voltage                                Very low level gate drive requirements allowing direct
  applications as a replacement for digital transistors. Since bias                       operation in 3V circuits. VGS(th) < 1.5V.
  resistors are not required, these N-Channel FET's can replace
                                                                                          Gate-Source Zener for ESD ruggedness.
  several digital transistors, with a variety of bias resistors.
                                                                                          >6kV Human Body Model.




                                          TM                            TM
       SOT-23                     SuperSOT -6                   SuperSOT -8               SO-8                  SOT-223              SOIC-16

                                    Mark: .301




                                                                                                                      INVERTER APPLICATION         Vcc

                                                                      4                           3                             D



                                                                                                                                                    OUT
                                                                      5                           2

                                                                                                           IN             G           S
                                                                      6                           1
                                                                                                                                                     GND




 Absolute Maximum Ratings                          TA = 25oC unless other wise noted
Symbol         Parameter                                                                                FDC6301N                               Units
VDSS, VCC      Drain-Source Voltage, Power Supply Voltage                                                    25                                  V
VGSS, VIN      Gate-Source Voltage, VIN                                                                 - 0.5 to +8                              V
ID, IOUT       Drain/Output Current              - Continuous                                               0.22                                 A
                                                 - Pulsed                                                   0.5
PD             Maximum Power Dissipation                            (Note 1a)                               0.9                                 W
                                                                    (Note 1b)
                                                                                                            0.7
TJ,TSTG        Operating and Storage Temperature Range                                                   -55 to 150                             

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