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                                                                                                                                     October 1997




 FDC6320C
 Dual N & P Channel , Digital FET

 General Description                                                               Features
  These dual N & P Channel logic level enhancement mode field                          N-Ch 25 V, 0.22 A, RDS(ON) = 5  @ VGS= 2.7 V.
  effec transistors are produced using Fairchild's proprietary,
  high cell density, DMOS technology. This very high density                           P-Ch 25 V, -0.12 A, RDS(ON) = 13  @ VGS= -2.7 V.
  process is especially tailored to minimize on-state resistance.
  The device is an improved design especially for low voltage                          Very low level gate drive requirements allowing direct
  applications as a replacement for bipolar digital transistors in                     operation in 3 V circuits. VGS(th) < 1.5 V.
  load switching applications. Since bias resistors are not
                                                                                       Gate-Source Zener for ESD ruggedness.
  required, this dual digital FET can replace several digital
                                                                                       >6kV Human Body Model
  transistors with difference bias resistors.
                                                                                       Replace NPN & PNP digital transistors.




          SOT-23                    SuperSOTTM-6           SuperSOTTM-8                SO-8                    SOT-223                  SOIC-16




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   Absolute Maximum Ratings                        TA = 25oC unless other wise noted
 Symbol          Parameter                                                             N-Channel                         P-Channel            Units
 VDSS, VCC       Drain-Source Voltage, Power Supply Voltage                                25                               -25                   V
 VGSS, VIN       Gate-Source Voltage,                                                      8                                -8                    V
 ID, IO          Drain/Output Current         - Continuous                               0.22                              -0.12                  A
                                              - Pulsed                                    0.5                              -0.5
 PD              Maximum Power Dissipation                        (Note 1a)                                0.9                                    W
                                                                  (Note 1b)                          0.7
 TJ,TSTG         Operating and Storage Tempature Ranger                                              -55 to 150                                   

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