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                                                                                                                                     April 1999




 FDC6321C
 Dual N & P Channel , Digital FET
 General Description                                                               Features
 These dual N & P Channel logic level enhancement mode                                   N-Ch 25 V, 0.68 A, RDS(ON) = 0.45  @ VGS= 4.5 V
 field effect transistors are produced using Fairchild's
 proprietary, high cell density, DMOS technology. This very                              P-Ch -25 V, -0.46 A, RDS(ON) = 1.1  @ VGS= -4.5 V.
 high density process is especially tailored to minimize
 on-state resistance. This device has been designed                                      Very low level gate drive requirements allowing direct
 especially for low voltage applications as a replacement for                            operation in 3 V circuits. VGS(th) < 1.0V.
 digital transistors in load switching applications. Since bias
                                                                                         Gate-Source Zener for ESD ruggedness.
 resistors are not required this dual digital FET can replace
                                                                                         >6kV Human Body Model
 several digital transistors with different bias resistors.
                                                                                         Replace multiple dual NPN & PNP digital transistors.




       SOT-23                     SuperSOTTM-6               SuperSOTTM-8                SO-8                SOT-223                  SOIC-16

                                      Mark:.321



                                             D2
                                        S1                                                           4                           3
                                 D1

                                                                                                     5                           2
                                                                  G2
                                                             S2
                  SuperSOT TM -6                     G1                                              6                           1



   Absolute Maximum Ratings                          TA = 25oC unless other wise noted
  Symbol         Parameter                                                               N-Channel                     P-Channel             Units
  VDSS, VCC      Drain-Source Voltage, Power Supply Voltage                                     25                        -25                   V
  VGSS, VIN      Gate-Source Voltage,                                                           8                         -8                    V
  ID, IO         Drain/Output Current             - Continuous                              0.68                         -0.46                  A
                                                  - Pulsed                                      2                        -1.5
  PD             Maximum Power Dissipation                        (Note 1a)                                 0.9                                 W
                                                                  (Note 1b)
                                                                                                            0.7
  TJ,TSTG        Operating and Storage Tempature Ranger                                                  -55 to 150                             

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