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                                                                                                                                November 1998




  FDG6321C
  Dual N & P Channel Digital FET
  General Description                                                             Features

 These dual N & P-Channel logic level enhancement mode field                           N-Ch 0.50 A, 25 V, RDS(ON) = 0.45  @ VGS= 4.5V.
 effect transistors are produced using Fairchild's proprietary,                                              RDS(ON) = 0.60  @ VGS= 2.7 V.
 high cell density, DMOS technology. This very high density
 process is especially tailored to minimize on-state resistance.                       P-Ch -0.41 A, -25 V,RDS(ON) = 1.1  @ VGS= -4.5V.
 This device has been designed especially for low voltage                                                    RDS(ON) = 1.5  @ VGS= -2.7V.
 applications as a replacement for bipolar digital transistors and
 small signal MOSFETS. Since bias resistors are not required,                          Very small package outline SC70-6.
 this dual digital FET can replace several different digital
 transistors, with different bias resistor values.                                     Very low level gate drive requirements allowing direct
                                                                                       operation in 3 V circuits(VGS(th) < 1.5 V).
                                                                                       Gate-Source Zener for ESD ruggedness
                                                                                       (>6kV Human Body Model).




        SC70-6                          SOT-23             SuperSOTTM-6                SOT-8                    SO-8                SOIC-14




                                      S2                                                         1                       6
                                G2
                          D1           .21
                                                                                                 2                       5
                                                    D2
                                                  G1
                                             S1                                                  3                       4
                       SC70-6




    Absolute Maximum Ratings                        TA = 25oC unless otherwise noted
  Symbol          Parameter                                                            N-Channel                       P-Channel          Units
  VDSS            Drain-Source Voltage                                                      25                            -25                 V
  VGSS            Gate-Source Voltage                                                       8                             -8                  V
  ID              Drain Current         - Continuous                                       0.5                           -0.41                A
                                         - Pulsed                                          1.5                           -1.2
  PD              Maximum Power Dissipation                    (Note 1)                                   0.3                                 W
  TJ,TSTG         Operating and Storage Temperature Ranger                                            -55 to 150                              

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